Zobrazeno 1 - 10
of 21
pro vyhledávání: '"You Jin Ji"'
Autor:
Won Oh Lee, Ki Hyun Kim, Doo San Kim, You Jin Ji, Ji Eun Kang, Hyun Woo Tak, Jin Woo Park, Han Dock Song, Ki Seok Kim, Byeong Ok Cho, Young Lae Kim, Geun Young Yeom
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic
Externí odkaz:
https://doaj.org/article/d89a414ff0824370aad9a742a2808c8d
Autor:
Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, Geun Young Yeom
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 ×
Externí odkaz:
https://doaj.org/article/f62d07bbb54d419fac39c2ce2a9b6298
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and
Externí odkaz:
https://doaj.org/article/4339ca8c9383416699decb6ebe553787
Autor:
Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Dongchul Sung, Marx Akl, Kuan Qiao, Ki Seok Kim, Bo-In Park, Menglin Zhu, Jun Min Suh, Jekyung Kim, Junseok Jeong, Yongmin Baek, You Jin Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Hyeong-Kyu Choi, Yanming Zhang, Haozhe Wang, Lingping Kong, Nordin Noor Afeefah, Mohamed Nainar Mohamed Ansari, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, Jinwoo Hwang, Jing Kong, Sang-Hoon Bae, Yunfeng Shi, Suklyun Hong, Wei Kong, Jeehwan Kim
Publikováno v:
Nature Nanotechnology. 18:464-470
Publikováno v:
ACS Applied Electronic Materials. 4:3794-3800
Autor:
Jong Hyun Ahn, Darrell G. Schlom, Heechang Shin, Sang-Hoon Bae, Jae-Hyun Lee, Chanyeol Choi, Geun Young Yeom, Chengye Dong, You Jin Ji, Yunpeng Liu, Hyunseok Kim, Kuangye Lu, Sangho Lee, Kuan Qiao, Hyun Kum, Ki-Hyun Kim, Jeehwan Kim, Saien Xie, Hanjong Paik, June Hyuk Lee, Joshua A. Robinson, Ki Seok Kim
Publikováno v:
ACS Nano. 15:10587-10596
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding sing
Publikováno v:
Micromachines; Volume 13; Issue 2; Pages: 173
Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si
Autor:
Inyong Moon, Dong-Ho Kang, Geun Young Yeom, Won Jong Yoo, Kyong Nam Kim, Ki-Hyun Kim, You Jin Ji, Ki Seok Kim, Jin-Hong Park, Keun Heo
Publikováno v:
Journal of Materials Chemistry C. 8:1846-1851
Adjusting the intrinsic properties of 2-dimensional (2D) transition metal dichalcogenide materials is important for their various applications in electronic devices. Among them, molybdenum disulfide (MoS2) is one of the most attractive layered 2D mat
Autor:
Ki Seok, Kim, You-Jin, Ji, Ki-Hyun, Kim, Ji-Eun, Kang, Albert Rogers, Ellingboe, Geun Young, Yeom
Publikováno v:
Micromachines. 13(2)
Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si
Autor:
Won Oh, Lee, Ki Hyun, Kim, Doo San, Kim, You Jin, Ji, Ji Eun, Kang, Hyun Woo, Tak, Jin Woo, Park, Han Dock, Song, Ki Seok, Kim, Byeong Ok, Cho, Young Lae, Kim, Geun Young, Yeom
Publikováno v:
Scientific reports. 12(1)
Precise and selective removal of silicon nitride (SiN