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Akademický článek
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Autor:
Jiang, Jie, Ling, Chongyi, Xu, Tao, Wang, Wenhui, Niu, Xianghong, Zafar, Amina, Yan, Zhenzhong, Wang, Xiaomu, You, Yumeng, Sun, Litao, Lu, Junpeng, Wang, Jinlan, Ni, Zhenhua
Publikováno v:
Advanced Materials 30, 1804332 (2018)
Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting in additio
Externí odkaz:
http://arxiv.org/abs/1808.06093
2H-TaSe2 is a model transition metal dichalcogenide material that develops charge density waves (CDWs).Here we present variable-temperature Raman spectroscopy study on both incommensurate charge density waves (ICDW) and optical phonon modes of 2H-TaS
Externí odkaz:
http://arxiv.org/abs/1712.01514
Autor:
Zafar, Amina, Nan, Haiyan, Zafar, Zainab, Wu, Zhangting, Jiang, Jie, You, Yumeng, Ni, Zhenhua
Publikováno v:
Nano Research 10, 1608-1617 (2017)
The optical emission efficiency of two dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameter that affects their optoelectronic performance. Optimization of growth parameters of chemical vapor deposition (C
Externí odkaz:
http://arxiv.org/abs/1609.09307
Autor:
Guo, Xitao, Wang, Wenhui, Nan, Haiyan, Yu, Yuanfang, Jiang, Jie, Zhao, Weiwei, Li, Jinhuan, Zafar, Zainab, Xiang, Nan, Ni, Zhonghua, Hu, Weida, You, Yumeng, Ni, Zhenhua
Publikováno v:
Optica 3, 1066-1070 (2016)
Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for achieving
Externí odkaz:
http://arxiv.org/abs/1608.05950
Autor:
Wu, Zhangting, Luo, Zhongzhong, Shen, Yuting, Zhao, Weiwei, Wang, Wenhui, Nan, Haiyan, Guo, Xitao, Sun, Litao, Wang, Xinran, You, Yumeng, Ni, Zhenhua
Publikováno v:
Nano Research 9, 3622-3631 (2016)
The electrical performance of two dimensional transitional metal dichalcogenides (TMDs) is strongly influenced by the amount of structural defects inside. In this work, we provide an optical spectroscopic characterization approach to correlate the am
Externí odkaz:
http://arxiv.org/abs/1608.02043
Autor:
Long, Mingsheng, Liu, Erfu, Wang, Peng, Gao, Anyuan, Luo, Wei, Wang, Baigeng, Zeng, Junwen, Fu, Yajun, Xu, Kang, Zhou, Wei, Lv, Yangyang, Yao, Shuhua, Lu, Minghui, Chen, Yanfeng, Ni, Zhenhua, You, Yumeng, Zhang, Xueao, Qin, Shiqiao, Shi, Yi, Hu, Weida, Xing, Dingyu, Miao, Feng
Publikováno v:
Nano Letters 16, 2254 (2016)
Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potenti
Externí odkaz:
http://arxiv.org/abs/1601.01814
Autor:
Liu, Erfu, Long, Mingsheng, Zeng, Junwen, Luo, Wei, Wang, Yaojia, Pan, Yiming, Zhou, Wei, Wang, Baigeng, Hu, Weida, Ni, Zhenhua, You, Yumeng, Zhang, Xueao, Qin, Shiqiao, Shi, Yi, Watanabe, K., Taniguchi, T., Yuan, Hongtao, Hwang, Harold Y., Cui, Yi, Miao, Feng, Xing, Dingyu
Publikováno v:
Advanced Functional Materials 26, 1938 (2016)
Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivit
Externí odkaz:
http://arxiv.org/abs/1512.06515
Autor:
Zhang, Xian, Sun, Dezheng, Li, Yilei, Lee, Gwan-Hyoung, Cui, Xu, Chenet, Daniel, You, Yumeng, Heinz, Tony, Hone, James
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined versio
Externí odkaz:
http://arxiv.org/abs/1509.07100