Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yotaro Goto"'
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper presents analyses of anomalous behaviors during negative drain input operation of fully isolated nLDMOS. Unexpected I−V curves, i) multiple polarity switching of I S/BG , ii) I SUB leakage before the parasitic PNP activation and iii) abr
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
Pinning voltage (V pin ) is one of the most important parameters for the performance of CMOS image sensors and should be controlled in production. In this paper, we demonstrate V pin control by direct measurement of the sheet resistance at micro test
Autor:
Tomohiro Yamashita, Takashi Kuroi, Yotaro Goto, Masazumi Matsuura, Tadashi Yamaguchi, Takeshi Kamino
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
White spots reduction by the ultimate proximity metal-gettering technology for CMOS image sensors is demonstrated. Metal contaminants in photodiodes (PDs) causing white spots can be captured by carbon complexes, as metal gettering sites, formed under