Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yosuke, Kajiwara"'
Autor:
Matthew Smith, Yosuke Kajiwara, Hiroshi Ono, Po-Chin Huang, Daimotsu Kato, Akira Mukai, Aya Shindome, Masahiko Kuraguchi
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e837f8363a9cc63a7e740db63e30a1
https://doi.org/10.1109/wipda49284.2021.9645147
https://doi.org/10.1109/wipda49284.2021.9645147
Autor:
Masataka Tsuji, Kentaro Ikeda, Masahiro Koyama, Toru Sugiyama, Akira Yoshioka, Hung Hung, Takenori Yasuzumi, Yosuke Kajiwara, Yasuhiro Isobe, Shinichi Umekawa, Yiyao Liu, Yusuke Sato
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We describe a proposed cascode GaN device configuration that allows stable operation during zero voltage switching (ZVS) turn-on transition and suppresses non-ZVS losses. We verified that application of our proposed device to an LLC resonant converte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82b2f24ae16cabe2dc1a46e0e61a54e2
https://doi.org/10.1109/ispsd46842.2020.9170130
https://doi.org/10.1109/ispsd46842.2020.9170130
Autor:
Aya Shindome, Toshiki Hikosaka, A. Mukai, Shinya Nunoue, Daimotsu Kato, Masahiko Kuraguchi, Hiroshi Ono, Yosuke Kajiwara
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The channel mobility and positive bias temperature instability is improved by the additional two processes of the gate structures in recessed normally-off GaN-MOSFETs. The one is the surface treatment for removal of the damage by the recess etching.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0068bfb27c50f2fc9688aae33feac869
https://doi.org/10.1109/iciprm.2019.8819114
https://doi.org/10.1109/iciprm.2019.8819114
Autor:
Yosuke Kajiwara, Miki Yumoto, Kunio Tsuda, Masahiko Kuraguchi, Shigeto Fukatsu, Hisashi Saito, Aya Shindome, Kohei Oasa, Yoshiharu Takada
Publikováno v:
physica status solidi c. 13:332-335
Enhancement-mode GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) have been reported. We utilized the atomic layer deposition (ALD) method for the fabrication process of the gate dielectric, in order to suppress plasma damage and obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bed7170291998b16d6419bdb5054048
https://doi.org/10.1002/pssc.201510225
https://doi.org/10.1002/pssc.201510225
Autor:
Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Shinya Nunoue, Masahiko Kuraguchi, Jumpei Tajima, Aya Shindome, Toshiki Hikosaka, Daimotsu Kato
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGD13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107920eef68e679dcdbc81467a21d0ce
https://doi.org/10.35848/1347-4065/ab6b7f
https://doi.org/10.35848/1347-4065/ab6b7f
Autor:
Daimotsu Kato, Hiroshi Ono, Kenjiro Uesugi, Shimizu Tatsuo, Masahiko Kuraguchi, Y. Nishida, Aya Shindome, A. Mukai, Toshiya Yonehara, Akira Yoshioka, Yosuke Kajiwara
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Threshold voltage shift of GaN MOSFET in positive bias temperature instability test was drastically suppressed by reducing certain impurity densities in SiO 2 gate dielectric. An analysis to estimate the charge trap level showed electron traps in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64dfc051ee0c67d2a5dcdcd3f3a0305
https://doi.org/10.1109/iedm.2017.8268490
https://doi.org/10.1109/iedm.2017.8268490
Autor:
Aya Shindome, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi, Toshiya Yonehara, Shinya Nunoue, Daimotsu Kato, H. Saito, Akira Yoshioka
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07fa69739b09ef7d78f3b66950aa80c
https://doi.org/10.7567/ssdm.2017.n-5-02
https://doi.org/10.7567/ssdm.2017.n-5-02
Autor:
Aya Shindome, Toshiya Yonehara, Toshiki Hikosaka, Daimotsu Kato, Shinya Nunoue, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi
Publikováno v:
physica status solidi (a). 215:1700511
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::210134930b31c78283b1565edf804964
https://doi.org/10.1002/pssa.201700511
https://doi.org/10.1002/pssa.201700511
Autor:
Toshinori, Matsushige, Fusao, Ikawa, Naohiko, Ohbyashi, Yasutaka, Imada, Yosuke, Kajiwara, Tetsuji, Inagawa
Publikováno v:
No shinkei geka. Neurological surgery. 32(8)
In the distal posterior inferior cerebellar artery (PICA), saccular aneurysms originating at the first proximal segment, anterior medullary segment (AMS), are unusual but important due to the presence of critical perforators that branch off the PICA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ad5dae48856c5faaa8bc3dfd53ff8e5d
https://pubmed.ncbi.nlm.nih.gov/15478654
https://pubmed.ncbi.nlm.nih.gov/15478654
Autor:
Hisashi Saito, Miki Yumoto, Shigeto Fukatsu, Yosuke Kajiwara, Aya Shindome, Kohei Oasa, Yoshiharu Takada, Kunio Tsuda, Masahiko Kuraguchi
Publikováno v:
Physica Status Solidi (C); May2016, Vol. 13 Issue 5/6, p332-335, 4p