Zobrazeno 1 - 10
of 110
pro vyhledávání: '"Yoshiyuki Tsusaka"'
Autor:
Yongzhao Yao, Yoshiyuki Tsusaka, Kohei Sasaki, Akito Kuramata, Yoshihiro Sugawara, Yukari Ishikawa
Publikováno v:
Applied Physics Letters. 121:012105
Using bright-field x-ray topography based on anomalous transmission (AT), we have demonstrated the first large-area total-thickness imaging of dislocations in β-Ga2O3 at the substrate scale. The dislocation images were acquired from the entire 10 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291355d36bc9a33384acc31a552e7601
https://doi.org/10.1063/5.0098942
https://doi.org/10.1063/5.0098942
Autor:
Mamoru Imade, Yusuke Mori, Toshio Kitamura, Kosuke Murakami, Junji Matsui, Masashi Yoshimura, Yoshiyuki Tsusaka, Takehiro Yoshida, Masatomo Shibata, Masayuki Imanishi
Publikováno v:
Crystal Growth & Design. 17:3806-3811
Homoepitaxial hydride vapor phase epitaxy (HVPE) growth on GaN substrates grown with a Na-flux method, which is the most promising approach for fabrication of large-diameter, low-dislocation-density, fast-growing GaN wafers, was attempted for the fir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1118cb3c8998f30fc96b583103ce39d5
https://doi.org/10.1021/acs.cgd.7b00388
https://doi.org/10.1021/acs.cgd.7b00388
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
Optical absorption in the L band (1.565–1.625 μm) of optical communication is significantly enhanced in Ge, which is grown on Si-on-quartz wafer as the substrate. This property is effective for photodetectors in terms of higher-capacity communicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aa8c324f49885d7aefaca91142251d5
https://doi.org/10.1109/group4.2019.8853882
https://doi.org/10.1109/group4.2019.8853882
Publikováno v:
Journal of Applied Physics. 128:133107
Enhanced optical absorption in the L band (1.565–1.625 μm) of optical communication is reported for a Ge epitaxial layer grown on a Si-on-quartz (SOQ) wafer toward an extended range Ge photodetector (PD) in Si photonics. Ge epitaxial layers are gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18983ec520d9689e5be68cd287c2cc4a
https://doi.org/10.1063/5.0023703
https://doi.org/10.1063/5.0023703
Autor:
Yu Fujita, Yoshihiro Sugawara, Yongzhao Yao, Yukari Ishikawa, Kazuyuki Tadatomo, Junji Matsui, Narihito Okada, Yoshiyuki Tsusaka
Publikováno v:
Applied Physics Letters. 117:092102
Dislocations in an AlN single crystal were studied via bright-field synchrotron x-ray topography under a multiple-beam diffraction (MBD) condition. Two-beam approximation conditions using nine different types of diffraction vectors (g) were applied,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb0f5c2016f94b75b3620150b7c67ae0
https://doi.org/10.1063/5.0015108
https://doi.org/10.1063/5.0015108
Autor:
Tomoko Kitamura, Masashi Yoshimura, Kousuke Nakamura, Yu Fujita, Junji Matsui, Kosuke Murakami, Masayuki Imanishi, Yoshiyuki Tsusaka, Keisuke Kakinouchi, Yusuke Mori, Kanako Okumura
Publikováno v:
Applied Physics Express. 13:085510
We recently invented a method called the flux-film-coated technique for purifying a GaN wafer with low dislocation density grown from point-seed crystals. In this study, we investigated the mechanism behind the reduction of dislocation density in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93905cc1575c872b1504ac3673c4e9f3
https://doi.org/10.35848/1882-0786/aba58e
https://doi.org/10.35848/1882-0786/aba58e
Publikováno v:
2018 IEEE 15th International Conference on Group IV Photonics (GFP).
Ge epitaxial layers grown on Si-on-“quartz” wafers reveal an enhanced in-plane tensile strain of 0.36±0.03%, which is 2–3 times larger than those grown on ordinary Si-on-insulator wafers. The enhancement is derived from an increased thermal ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32eef55439672b2a496c1c28e387cae
https://doi.org/10.1109/group4.2018.8478700
https://doi.org/10.1109/group4.2018.8478700
Publikováno v:
Journal of Applied Physics. 125:125105
Basal-plane and threading dislocations in multipoint-seed Na-flux-grown GaN single crystals are characterized in terms of Burgers vectors mainly by using bright-field X-ray topography under multiple-diffraction conditions. The technique, combined wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43eb383e7ea6d0c0cbdffc428b07f59e
https://doi.org/10.1063/1.5082990
https://doi.org/10.1063/1.5082990
Autor:
Yasushi Kagoshima, Yoshiyuki Tsusaka, Kazuhiro Sumida, Takahisa Koyama, Hisataka Takenaka, Toshiki Hirotomo, Hidekazu Takano, Satoshi Ichimaru, Shigeki Konishi, T. Ohchi
Publikováno v:
AIP Conference Proceedings.
Multilayer zone plate (MZP) technology for hard X-ray focusing was upgraded and its focusing performance was evaluated using 20-keV X-rays at the synchrotron beamline (BL24XU) of SPring-8. The MZP consists of MoSi2 and Si layers alternately deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9c802ab3f4e6a546c3561d1a3d1655
https://doi.org/10.1063/1.4937511
https://doi.org/10.1063/1.4937511
Autor:
Yasushi Kagoshima, Atsuyuki Matsumura, Takuya Tsuji, Kenji Sakka, Yoshiyuki Tsusaka, Hidekazu Takano
Publikováno v:
AIP Conference Proceedings.
A total-reflection zone plate (TRZP), which is a reflective grating that generates a line focus of hard X-rays, was developed. Newly designed TRZPs, introducing a laminar grating concept, were fabricated with various zone parameters. The focusing per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffa741c89be76d7b9a478f2689150b73
https://doi.org/10.1063/1.4937533
https://doi.org/10.1063/1.4937533