Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yoshiyuki Sekine"'
Autor:
Mikihiko Ishii, Yutaka Watanabe, Katsuhiko Murakami, Takayuki Hasegawa, Shinichi Hara, Yucong Zhu, Kazuya Ota, Jun Kawakami, Tetsuya Oshino, Masanobu Hasegawa, Akiyoshi Suzuki, Osamu Kakuchi, Jun Saito, Yoshiyuki Sekine, Hiroyuki Kondo, Katsumi Sugisaki, Chidane Ouchi, Seiji Takeuchi
Publikováno v:
Japanese Journal of Applied Physics. 42:5844-5847
We present a type of lateral shearing interferometer (LSI) for at-wavelength characterization of the projection lens for use in extreme-ultraviolet lithography (EUVL). LSI is one of the potential candidates for high Numerical Aperture (NA) optics tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb36bb0bbc9ee0f30bc238357d477dd6
https://doi.org/10.1143/jjap.42.5844
https://doi.org/10.1143/jjap.42.5844
Publikováno v:
Publications of the Astronomical Society of Japan. 53:1191-1210
A dwarf nova HV Vir was observed photometrically for eight nights during the outburst in 1992 April - May. The star showed two distinct types of periodic variation: (1) 82.20-min (0.05708 d) double-humped variation with decaying amplitudes during the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de3d017c8df76298cd96553d33109065
https://doi.org/10.1093/pasj/53.6.1191
https://doi.org/10.1093/pasj/53.6.1191
Publikováno v:
Applied optics. 48(8)
We present a method to determine constructive and destructive interference areas on the object plane in partially coherent imaging. This method is based on the interference pattern on the image plane. A function Gamma that shows constructive and dest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35060f0b6fd6925536aac5be7ef9a0cd
https://pubmed.ncbi.nlm.nih.gov/19277072
https://pubmed.ncbi.nlm.nih.gov/19277072
Autor:
Miyoko Kawashima, Tokuyuki Honda, Kenji Yamazoe, Masakatsu Ohta, Yoshiyuki Sekine, Manabu Hakko
Publikováno v:
SPIE Proceedings.
The extendibility of 2D-TCC technique to an isolated line of 45 nm width is investigated in this paper. The 2D-TCC technique optimizes mask patterns placing assist pattern automatically. For 45 nm line patterns, the assist pattern width generally bec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636ff72bd7bd1a4975fecdfa83990fbe
https://doi.org/10.1117/12.793041
https://doi.org/10.1117/12.793041
Autor:
Kenji Yamazoe, Manabu Hakko, Masakatsu Ohta, Yoshiyuki Sekine, Miyoko Kawashima, Tokuyuki Honda
Publikováno v:
Optical Microlithography XXI.
In this paper, a new resolution enhancement technique named 2D-TCC technique is proposed. This method can enhance resolution of line patterns as well as that of contact hole patterns by the use of an approximate aerial image. The aerial image, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::429026e1430c9a5a6d5f9b8584b46375
https://doi.org/10.1117/12.771943
https://doi.org/10.1117/12.771943
Publikováno v:
SPIE Proceedings.
A newly developed sub-resolution assist feature (SRAF) placement technique with two-dimensional transmission cross coefficient (2D-TCC) is described in this paper. In SRAF placement with 2D-TCC, Hopkins' aerial image equation with four-dimensional TC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9d30d7ae3ded60ce4fbe03cfff67682
https://doi.org/10.1117/12.746862
https://doi.org/10.1117/12.746862
Autor:
Keita Sakai, Tokuyuki Honda, Akihiro Yamada, Miyoko Kawashima, Yoshiyuki Sekine, Eiji Sakamoto
Publikováno v:
SPIE Proceedings.
ArF water immersion exposure systems with a numerical aperture (NA) of over 1.3 are currently being developed and are expected to be used for the node up to 45-nm half-pitch. Although there are multiple candidates for the next generation node, we her
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ac07ca93075098d5c9c6df9679bfdda
https://doi.org/10.1117/12.711940
https://doi.org/10.1117/12.711940
Autor:
Zhiqiang Liu, Takayuki Hasegawa, Masashi Okada, Mikihiko Ishii, Masahito Niibe, Jun Kawakami, Mitsuo Takeda, Masanobu Hasegawa, Akinori Ohkubo, Seima Kato, Jun Saito, Chidane Ouchi, Akiyoshi Suzuki, Katsura Otaki, Yoshiyuki Sekine, Zhu Yucong, Katsuhiko Murakami, Katsumi Sugisaki
Publikováno v:
Fringe 2005 ISBN: 3540260374
We have been developing the metrological techniques to achieve 0.1 nm accuracy for evaluating the EUV lithographic optics. To select the most suitable methods, six different methods are compared. As a result, we have concluded that the PDI, the LDI a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c9377e614eb6070e9705157aa2da6c
https://doi.org/10.1007/3-540-29303-5_35
https://doi.org/10.1007/3-540-29303-5_35
Autor:
Akiyoshi Suzuki, Yoshiyuki Sekine, Yuichi Iwasaki, Miyoko Kawashima, Akinori Ohkubo, Yasuhiro Kishikawa, Kenji Yamazoe, Tokuyuki Honda
Publikováno v:
Optical Microlithography XVIII.
As imaging properties of ArF Immersion optics are evaluated in a hyper-NA region, the polarization of illumination systems and vectorial mask diffraction play an important role. We investigate the effectiveness of polarized illumination for practical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c828b352a698dbbd4e3ad2f6e3c08a97
https://doi.org/10.1117/12.600500
https://doi.org/10.1117/12.600500
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
ArF immersion lithography (Lin, 2004) has emerged as the primary solution for the manufacturing of semiconductor device for 65-nm half-pitch node and beyond. The immersion technique allows the design of projection optics with a numerical aperture tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b40f8ee826825d3f6717c6433ef8fe4
https://doi.org/10.1109/imnc.2005.203712
https://doi.org/10.1109/imnc.2005.203712