Výsledky vyhledávání - "Yoshiyuki Kurokawa"

Optimal Beam Quality in Chest Radiography Using CsI-flat Panel Detector for Detection of Pulmonary Nodules

Autor: Yoshito Tabata, Nobuhiro Oda, Tatsunori Hara, Shuzo Uehara, Tsutomu Nakano, Masayoshi Mizuta, Yasuki Asada, Takatoshi Aoki, Yoshiyuki Kurokawa

Publikováno v: Japanese Journal of Radiological Technology. 77:335-343

Objectives Optimal beam quality for detection of pulmonary nodules in digital chest radiography using CsI-flat panel detector (FPD) was investigated in consideration of image quality and patient dose. Methods The human chest phantom with inserted imi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2332dfd3b3f2947936eb62b25ed52a7
https://doi.org/10.6009/jjrt.2021_jsrt_77.4.335

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Evaluation of 90 kV Beam with 0.15 mm Cu Filter in Chest Radiography Using CsI-flat Panel Detector

Autor: Kouichi Tabuki, Shuzo Uehara, Shinya Yokota, Kuniko Yamagata, Norio Sasaki, Tsutomu Nakano, Shinkichi Kameyama, Hiroaki Ihara, Nobuhiro Oda, Shinya Yamazaki, Yoshiyuki Kurokawa

Publikováno v: Japanese Journal of Radiological Technology. 76:463-473

PURPOSE To compare the visibility of anatomic structure in chest radiography acquired with different beam quality (120 kV beam and 90 kV beam with 0.15 mmCu) using CsI-flat panel detector. METHOD Pair image obtained by different beam quality of 100 p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99a8c75dfcaf72dc052f22cb6e662133
https://doi.org/10.6009/jjrt.2020_jsrt_76.5.463

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16-1: Low-Power Oxide-Semiconductor Display System

Autor: Hitoshi Kunitake, Hai Biao Yao, Munehiro Kozuma, Takayuki Ikeda, Shunpei Yamazaki, Takashi Nakagawa, Shao Hui Wu, Fumika Akasawa, Chi Chang Shuai, Makoto Ikeda, Seiichi Yoneda, Hiroki Inoue, Harada Shintaro, Yoshiyuki Kurokawa, Takeshi Aoki, Hung Chan Lin, Yuki Okamoto

Publikováno v: SID Symposium Digest of Technical Papers. 48:197-200

An oxide semiconductor (OS) display system built with normally-off devices, nonvolatile OS LSI and an OS display, is proposed. The power consumption of the system is reduced by the nonvolatile OS LSI performing power gating without vanishing setting

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57defc9a2256dff0a9938df33b44180c
https://doi.org/10.1002/sdtp.11627

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Subthreshold Operation of CAAC-IGZO FPGA by Overdriving of Programmable Routing Switch and Programmable Power Switch

Autor: Masahiro Fujita, Takeshi Aoki, Yuki Okamoto, Hidekazu Miyairi, Takashi Nakagawa, Yoshiyuki Kurokawa, Takayuki Ikeda, Naoto Yamade, Makoto Ikeda, Yoshinori Ieda, Shunpei Yamazaki, Munehiro Kozuma

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:125-138

A field-programmable gate array (FPGA) using a crystalline oxide semiconductor of c-axis-aligned crystal indium-gallium–zinc oxide (CAAC-IGZO) has been developed, which is capable of subthreshold operation used for energy harvesting. To achieve sub

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e926f90f784775508e5194947e33d13
https://doi.org/10.1109/tvlsi.2016.2571744

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(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI

Autor: Yuki Ito, Shinya Sasagawa, Ryota Hodo, Masahiro Takahashi, Tatsuya Onuki, Shunpei Yamazaki, Haruyuki Baba, Hitoshi Kunitake, Naoki Okuno, Yoshiyuki Kurokawa, Yasumasa Yamane, Yasuhiro Jimbo

Publikováno v: ECS Meeting Abstracts. :993-993

Scaling of Si MOSFETs has proceeded based on scaling law reported by R. H. Dennard in 1974[1], and technologies scaled down to 5 nm node are currently incorporated in ICs in production. Meanwhile, according to an IEEE semiconductor roadmap[2], the 5-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ceb1da069c4f587fca8abe6af5f5039e
https://doi.org/10.1149/ma2021-0130993mtgabs

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A 25. 3 $\mu$ W at 60 fps $240 \times 160$ Pixel Vision Sensor for Motion Capturing With In-Pixel Nonvolatile Analog Memory Using CAAC-IGZO FET

Autor: Yuki Okamoto, Takashi Nakagawa, Shuhei Maeda, Seiichi Yoneda, Naoto Yamade, Takuro Ohmaru, Makoto Ikeda, Shunpei Yamazaki, Yoshiyuki Kurokawa, Hiroki Inoue, Munehiro Kozuma, Takayuki Ikeda, Yoshinori Ieda, Hidekazu Miyairi

Publikováno v: IEEE Journal of Solid-State Circuits. 51:2168-2179

Utilizing a c-axis-aligned crystalline oxide semiconductor-based FET, we have fabricated a vision sensor with in-pixel nonvolatile analog memory. The sensor realized normal image data capturing, captured differential data of a given reference frame,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::446424a426b788a5cef2c054deab8d98
https://doi.org/10.1109/jssc.2016.2586501

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