Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yoshitomo Hatakeyama"'
Autor:
Kazuki Nomoto, Akihisa Terano, Naoki Kaneda, Tomoyoshi Mishima, Shigehisa Tanaka, Yoshitomo Hatakeyama, Tadayoshi Tsuchiya, Tohru Nakamura, Tomonobu Tsuchiya, Kazuhiro Mochizuki, Hiroyuki Uchiyama, Yuya Ishida
Publikováno v:
Materials Science Forum. :1189-1192
An effective acceptor level (EAeff) for representing the increased ionization ratio in extrinsically photon-recycled p-type GaN is proposed.EAeffat 300 K in the range of 0.1360.145 eV is found to reproduce current/voltage characteristics of transmiss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ae1a31a2a581484c0164ed1549e09fc
https://doi.org/10.4028/www.scientific.net/msf.778-780.1189
https://doi.org/10.4028/www.scientific.net/msf.778-780.1189
Autor:
Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose, Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya, Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya, Tohru Nakamura
Publikováno v:
IEEE Transactions on Electron Devices. 59:1091-1098
The influence of surface recombination on forward current-voltage (IF-VF) characteristics of gallium nitride (GaN) p+n diodes formed on GaN free-standing substrates was both experimentally and computationally investigated. In the temperature range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4eee4d1c5e9b02448f74972fc49d6cb
https://doi.org/10.1109/ted.2012.2185241
https://doi.org/10.1109/ted.2012.2185241
Autor:
Naoki Kaneda, Yoshitomo Hatakeyama, Kazuki Nomoto, T. Nakamura, Tomoyoshi Mishima, Toshihiro Kawano
Publikováno v:
IEEE Electron Device Letters. 32:1674-1676
This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific ON-resistance Rοn and high breakdown voltage VB. We develop a two-step process for anode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5a0fe96e1218b484433c76069ce2d65
https://doi.org/10.1109/led.2011.2167125
https://doi.org/10.1109/led.2011.2167125
Autor:
Tohru Nakamura, Tomoyoshi Mishima, Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda, Tadayoshi Tsuchiya, Akihisa Terano
Publikováno v:
Japanese Journal of Applied Physics. 52:028007
In this letter, we describe the characteristics of Gallium Nitride (GaN) p–n junction diodes fabricated on free-standing GaN substrates with low specific on-resistance R on and high breakdown voltage V B. The breakdown voltage of the diodes with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc3a5a1975425854bcaeacbce433d85
https://doi.org/10.7567/jjap.52.028007
https://doi.org/10.7567/jjap.52.028007