Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yoshitake Ichikawa"'
Publikováno v:
Applied Surface Science. 254:7963-7967
We have succeeded in growing semiconductor (BaSi2)/metal (CoSi2) hybrid structures epitaxially on Si(1 1 1) by molecular beam epitaxy for the first time. When the thickness of CoSi2 was approximately 55 nm, the interface between the CoSi2 and BaSi2 l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f08ac4d30ca5d77203d0fde1762fb6f
https://doi.org/10.1016/j.apsusc.2008.04.011
https://doi.org/10.1016/j.apsusc.2008.04.011
Publikováno v:
Journal of Crystal Growth. 310:1250-1255
We successfully demonstrated epitaxial growth of semiconductor (BaSi2)/metal(CoSi2) Schottky-barrier structures on Si(1 1 1), for the first time, by molecular beam epitaxy (MBE). The interface between the CoSi2 and BaSi2 layers was found to be sharp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5abe3b838cbe6751ad1b892c6428bd
https://doi.org/10.1016/j.jcrysgro.2007.12.044
https://doi.org/10.1016/j.jcrysgro.2007.12.044
Autor:
Takashi Suemasu, Itsuhiro Kakeya, Kazuhiro Yamaki, Kimiaki Yamaguchi, Yoshitake Ichikawa, Kazuo Kadowaki, Tatsuya Yui
Publikováno v:
Japanese Journal of Applied Physics. 45:L705-L707
c-Axis-oriented hexagonal Fe3N films were epitaxially grown on Si(111) substrates by molecular beam epitaxy using AlN/3C?SiC intermediate layers. It was found that the magnetic moments of Fe3N epitaxial film faced parallel to the film plane, and that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236e9506de5da00296264bd50fa43a9c
https://doi.org/10.1143/jjap.45.l705
https://doi.org/10.1143/jjap.45.l705
Autor:
S. Murase, Michitaka Kobayashi, Y. Ugajin, Mitsushi Suzuno, K. Morita, Yoshitake Ichikawa, Takashi Suemasu
Publikováno v:
SPIE Proceedings.
Si/β-FeSi 2 /Si (SFS) structures with β-FeSi 2 particles on Si(001), and SFS structures with β-FeSi 2 continuous films were epitaxially grown on both Si(001) and Si(lll) substrates by molecular-beam epitaxy (MBE). All the samples exhibited the sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d5decbdd56e44b611665895005e368
https://doi.org/10.1117/12.731941
https://doi.org/10.1117/12.731941
Publikováno v:
Applied Physics Express. 1:051403
Highly a-axis-oriented n- and p-type BaSi2 films were grown on Si(111) substrates by molecular beam epitaxy using Sb and In doping atoms, respectively. The hole concentration of In-doped BaSi2 was controlled in the range between 1016 and 1017 cm-3 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294dbed650ff3829509c654989b2907e
https://doi.org/10.1143/apex.1.051403
https://doi.org/10.1143/apex.1.051403
Publikováno v:
Journal of the American Chemical Society. 120:5854-5854
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6951e61078d785c7c2971a6a296a0687
https://doi.org/10.1021/ja985509x
https://doi.org/10.1021/ja985509x
Publikováno v:
Physics Procedia. :53-56
Polycrystalline BaSrSi2 layers were grown on SiO2 substrates by molecular beam epitaxy, and the local structure of the Sr in the BaSrSi2 films was investigated using extended X-ray absorption fine strcture (EXAFS) analysis. The local structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70de36b1f04036e3cce4a0e99cf2e0c0