Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yoshitaka Kuraoka"'
Autor:
Hiroyasu Ishikawa, Masahiro Sakai, Tomohiko Shibata, Osamu Oda, Shigeaki Sumiya, Masayoshi Umeno, Mitsuhiro Tanaka, Takashi Jimbo, Yoshitaka Kuraoka, Keiichiro Asai, Takashi Egawa
Publikováno v:
Journal of Crystal Growth. 244:6-11
High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/V s with the carrier concentration of 7.6×1016 cm−3 at 300 K along with low dislocation density of 5×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a4821f571998a4bc89a2b61a74a7e1
https://doi.org/10.1016/s0022-0248(02)01573-7
https://doi.org/10.1016/s0022-0248(02)01573-7
Autor:
Mitsuhiro Tanaka, Yoshitaka Kuraoka, Keiichiro Asai, Osamu Oda, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo, Subramaniam Arulkumaran, Tomohiko Shibata, Masahiro Sakai, Shigeaki Sumiya
Publikováno v:
APPLIED PHYSICS LETTERS. 81(6):1131-1133
High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room temperature. Better dc characteristics with high extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fff55ada7b473a51c6e215c21239673f
http://id.nii.ac.jp/1476/00005072/
http://id.nii.ac.jp/1476/00005072/
Autor:
Makoto Miyoshi, L. Selvaraj, Mitsuhiro Tanaka, Yoshitaka Kuraoka, T. Egawa, Josephine Selvaraj
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbcfc7661f66674020b9439d07149469
https://doi.org/10.7567/ssdm.2008.g-1-4
https://doi.org/10.7567/ssdm.2008.g-1-4
Autor:
Masahiro Sakai, S Sumiya, Keiichiro Asai, Osamu Oda, M Umeno, T Jimbo, Hiroyasu Ishikawa, Tomohiko Shibata, Yoshitaka Kuraoka, M Tanaka, T Egawa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e487cb36484175c27eb3aaf0cd8889
https://doi.org/10.1201/9781482268980-112
https://doi.org/10.1201/9781482268980-112
Autor:
Makoto Miyoshi, Takashi Egawa, Mitsuhiro Tanaka, Yoshitaka Kuraoka, Josephine Selvaraj, Susai Lawrence Selvaraj
Publikováno v:
Japanese Journal of Applied Physics. 48:04C102
InAlN/GaN epilayer on AlN/Sapphire template was grown by metalorganic chemical vapor deposition (MOCVD) with a very high electron sheet carrier density ns = 2.6×1013 cm-2 and a Hall mobility as high as µHall = 1170 cm2 V-1 s-1 at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41975f24d1cd938114fc27460bbef6bc
https://doi.org/10.1143/jjap.48.04c102
https://doi.org/10.1143/jjap.48.04c102
Publikováno v:
Applied Physics Express. 1:081102
InAlN/GaN two-dimensional electron gas (2DEG) heterostructures were successfully grown by metalorganic chemical vapor deposition. X-ray photoelectron spectroscopy and X-ray diffraction measurements revealed that the barrier layer consists of a ternar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04dffc72c7614b27985684eb5b385b56
https://doi.org/10.1143/apex.1.081102
https://doi.org/10.1143/apex.1.081102
Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN template
Publikováno v:
Electronics Letters. 43:953
AlGaN/GaN-based planer Schottky barrier diodes (SBDs) with circular anode configuration were formed on AlN template and on sapphire. SBDs formed on AlN template exhibited clearly improved reverse-blocking characteristics compared with SBDs formed on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab069c498334ad07e25527c2b0bd260
https://doi.org/10.1049/el:20071141
https://doi.org/10.1049/el:20071141