Výsledky vyhledávání - "Yoshio Shimoida"

A Study on an Advanced Lithium-ion Battery System for EVs

Autor: Takuya Kinoshita, Takaaki Abe, Hideaki Horie, Yoshio Shimoida

Publikováno v: World Electric Vehicle Journal
Volume 2
Issue 2
Pages 113-119

This paper presents an extensive study concerning a lithium-ion battery system for constructing high-performance power source systems intended to make advanced environmental vehicles a practical reality. Battery performance must be predicted and desi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e226e7b8dbd26d7c744bf9d136fa3e14
https://doi.org/10.3390/wevj2020113

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Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)

Autor: Hideaki Tanaka, Tetsuya Hayashi, Masakatsu Hoshi, Satoshi Tanimoto, Yoshio Shimoida, Yamagami Shigeharu

Publikováno v: Materials Science Forum. :1453-1456

We demonstrate a novel power Si/4H-SiC heterojunction tunneling transistor (HETT) on the basis of theoretical analysis and experimental results. The HETT is an insulated gate drive device and has a unique switching mechanism. In the off-state, the he

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9d56e2a157ce579c14c6962941145e3
https://doi.org/10.4028/www.scientific.net/msf.527-529.1453

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New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode

Autor: Yoshio Shimoida, Masakatsu Hoshi, Hideaki Tanaka, Satoshi Tanimoto, Tetsuya Hayashi

Publikováno v: Materials Science Forum. :953-956

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a0eaf38906304eccf4010179f146e6c
https://doi.org/10.4028/www.scientific.net/msf.483-485.953

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High-Reliability ONO Gate Dielectric for Power MOSFETs

Autor: Hideaki Tanaka, Teruyoshi Mihara, Satoshi Tanimoto, Tetsuya Hayashi, Yoshio Shimoida, Masakatsu Hoshi

Publikováno v: Materials Science Forum. :677-680

Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b8229f0f924b72ad4cafbd21d97d0bd
https://doi.org/10.4028/www.scientific.net/msf.483-485.677

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