Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yoshio Ohfuji"'
Autor:
Yoshio Ohfuji, Tsuyoshi Fujimoto, Shu Goto, Masao Ikeda, T. Hashizu, Shinro Ikeda, Motonobu Takeya, Takashi Mizuno
Publikováno v:
physica status solidi (c). 1:1461-1467
GaN-based blue-violet lasers with a kink-free output power of higher than 150 mW have been successfully realized by adopting a new ridge structure and appropriately designing the beam divergence. The new ridge structure is a narrow 1.4 μm ridge cove
Autor:
Tomomi Sasaki, Kenji Oikawa, Takashi Mizuno, Motonobu Takeya, Yoshio Ohfuji, Shiro Uchida, Tsuyoshi Fujimoto, Masao Ikeda, Yoshifumi Yabuki, Shinro Ikeda
Publikováno v:
physica status solidi (c). :2292-2295
Degradation experiments for AlGaInN-based laser diodes were conducted for the purpose of constructing a possible model of the degradation mechanism. Lasers in this experiment were aged under 30 mW continuous-wave operation at 60 °C, and the lifetime
Autor:
Tamotsu Eguchi, Yoshio Ohfuji
Publikováno v:
KOBUNSHI RONBUNSHU. 51:825-828
3, 3′, 4, 4′-テトラアミノビフェニルと1, 3-ジシアノベンゼンの溶融重縮合について検討した. 粉末化状態での固相後重合工程を経る事なく, 一工程で高分子量のポリ (2, 2′-m-フェニレン-5
Autor:
Tamotsu Eguchi, Yoshio Ohfuji
Publikováno v:
KOBUNSHI RONBUNSHU. 53:77-79
塩化アンモニウム触媒存在下3, 3′, 4, 4′-テトラアミノビフェニル (TAB) と1, 3-ジシアノベンゼンの一段溶融重縮合により得られた高分子量ポリ (2, 2′-m-フェニレン-5, 5′-ビベンゾイミダ
Autor:
Tsuyoshi Fujimoto, Shu Goto, Yoshio Ohfuji, Takeharu Asano, Kenji Oikawa, Shinro Ikeda, Takashi Mizuno, M. Takeya, Toshihiro Hashizu, Masao Ikeda, Keigo Aga
Publikováno v:
SPIE Proceedings.
400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the
Autor:
Yoshio Ohfuji, Yoshifumi Yabuki, Tomomi Sasaki, Shinroh Ikeda, Kenji Oikawa, Tsuyoshi Fujimoto, Shiro Uchida, Masao Ikeda, M. Takeya, Takashi Mizuno
Publikováno v:
SPIE Proceedings.
This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in