Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yoshio Ohfuji"'
Autor:
Yoshio Ohfuji, Tsuyoshi Fujimoto, Shu Goto, Masao Ikeda, T. Hashizu, Shinro Ikeda, Motonobu Takeya, Takashi Mizuno
Publikováno v:
physica status solidi (c). 1:1461-1467
GaN-based blue-violet lasers with a kink-free output power of higher than 150 mW have been successfully realized by adopting a new ridge structure and appropriately designing the beam divergence. The new ridge structure is a narrow 1.4 μm ridge cove
Autor:
Tomomi Sasaki, Kenji Oikawa, Takashi Mizuno, Motonobu Takeya, Yoshio Ohfuji, Shiro Uchida, Tsuyoshi Fujimoto, Masao Ikeda, Yoshifumi Yabuki, Shinro Ikeda
Publikováno v:
physica status solidi (c). :2292-2295
Degradation experiments for AlGaInN-based laser diodes were conducted for the purpose of constructing a possible model of the degradation mechanism. Lasers in this experiment were aged under 30 mW continuous-wave operation at 60 °C, and the lifetime
Autor:
Tamotsu Eguchi, Yoshio Ohfuji
Publikováno v:
KOBUNSHI RONBUNSHU. 51:825-828
3, 3′, 4, 4′-テトラアミノビフェニルと1, 3-ジシアノベンゼンの溶融重縮合について検討した. 粉末化状態での固相後重合工程を経る事なく, 一工程で高分子量のポリ (2, 2′-m-フェニレン-5
Autor:
Tamotsu Eguchi, Yoshio Ohfuji
Publikováno v:
KOBUNSHI RONBUNSHU. 53:77-79
塩化アンモニウム触媒存在下3, 3′, 4, 4′-テトラアミノビフェニル (TAB) と1, 3-ジシアノベンゼンの一段溶融重縮合により得られた高分子量ポリ (2, 2′-m-フェニレン-5, 5′-ビベンゾイミダ
Autor:
Tsuyoshi Fujimoto, Shu Goto, Yoshio Ohfuji, Takeharu Asano, Kenji Oikawa, Shinro Ikeda, Takashi Mizuno, M. Takeya, Toshihiro Hashizu, Masao Ikeda, Keigo Aga
Publikováno v:
SPIE Proceedings.
400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the
Autor:
Yoshio Ohfuji, Yoshifumi Yabuki, Tomomi Sasaki, Shinroh Ikeda, Kenji Oikawa, Tsuyoshi Fujimoto, Shiro Uchida, Masao Ikeda, M. Takeya, Takashi Mizuno
Publikováno v:
SPIE Proceedings.
This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in
Autor:
Takeya, M., Mizuno, T., Ikeda, S., Fujimoto, T., Ohfuji, Y., Oikawa, K., Asano, T., Hashizu, T., Ikeda, M.
Publikováno v:
Conference on Lasers & Electro-Optics, 2004. (CLEO); 2004, p1-1, 1p
Publikováno v:
Physica Status Solidi (C); 2005, Vol. 2 Issue 4, p1310-1313, 4p
Autor:
Takeya, Motonobu, Mizuno, Takashi, Sasaki, Tomomi, Ikeda, Shinro, Fujimoto, Tsuyoshi, Ohfuji, Yoshio, Oikawa, Kenji, Yabuki, Yoshifumi, Uchida, Shiro, Ikeda, Masao
Publikováno v:
Physica Status Solidi (C); 2003, Vol. 0 Issue 7, p2292-2295, 4p
A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the sign