Zobrazeno 1 - 10
of 420
pro vyhledávání: '"Yoshio OHSHITA"'
Autor:
Tomohiko Hara, Yoshio Ohshita
Publikováno v:
AIP Advances, Vol 14, Iss 1, Pp 015202-015202-8 (2024)
We investigate the electrical characteristics of defects at the SiO2/Si interface, within the adjacent Si crystal, and through the depth profile of the bulk defect using three-dimensional deep-level transient spectroscopy (3D-DLTS). These defects are
Externí odkaz:
https://doaj.org/article/5b57b675756943d0b1ad1e0d01880b94
Autor:
Seira Yamaguchi, Kyotaro Nakamura, Taeko Semba, Keisuke Ohdaira, Kazuhiro Marumoto, Yoshio Ohshita, Atsushi Masuda
Publikováno v:
Energy Science & Engineering, Vol 10, Iss 7, Pp 2268-2275 (2022)
Abstract This study investigated how the SiNx refractive index (RI) and SiO2 thickness, dox, of stacked SiNx/SiO2 passivation layers of the front p+emitters of n‐type crystalline‐silicon (c‐Si) photovoltaic (PV) cells affect their polarization
Externí odkaz:
https://doaj.org/article/5752560b1fa84351aa831fe4462d6c49
Autor:
Tomohiko Hara, Yoshio Ohshita
Publikováno v:
AIP Advances, Vol 12, Iss 9, Pp 095316-095316-6 (2022)
This paper proposes a new double carrier pulse deep-level transient spectroscopy (DC-DLTS) method that is applicable for evaluating metal–insulator–semiconductor (MIS) structures and the recombination centers in carrier-selective contact solar ce
Externí odkaz:
https://doaj.org/article/50c8fe94bd564fa28db769ca619bac67
Publikováno v:
Crystals, Vol 13, Iss 2, p 310 (2023)
Suppression of the formation of crystal defects is essential for the realization of high-efficiency solar cells. The reactive plasma deposition (RPD) process introduces defects in the silicon crystal bulk and at the passivation layer/silicon crystal
Externí odkaz:
https://doaj.org/article/68ed3bcaf8af4f44a1b62c04da4c339d
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105219-105219-5 (2019)
A reactive-plasma deposition (RPD) process damage is evaluated for an indium-tin-oxide (ITO)/SiO2/Si structure in terms of the recombination properties at the interface. To calculate the surface recombination velocity (SRV), the defect density at the
Externí odkaz:
https://doaj.org/article/30816bdf561542c0a2ee4f3046c74436
Autor:
Changhyun Lee, Soohyun Bae, HyunJung Park, Dongjin Choi, Hoyoung Song, Hyunju Lee, Yoshio Ohshita, Donghwan Kim, Yoonmook Kang, Hae-Seok Lee
Publikováno v:
Energies, Vol 13, Iss 3, p 678 (2020)
Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study
Externí odkaz:
https://doaj.org/article/bec9717fbd674076910f94af6f0f1f6d
Autor:
Tomihisa Tachibana, Kyotaro Nakamura, Atsushi Ogura, Yoshio Ohshita, Takafumi Shimoda, Isao Masada, Eiichi Nishijima
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045111-045111-7 (2017)
The effects of residual C on cell properties are investigated from the view point of thermal budget in the n-type bifacial cell processes. Implied Voc obtained from wafers with same Oi concentration depend on the thermal budgets decreases as the Cs c
Externí odkaz:
https://doaj.org/article/211e79c4f5b147f29fd65ddbaaac2e9b
Autor:
Hidetoshi Suzuki, Yuka Nakata, Masamitu Takahasi, Kazuma Ikeda, Yoshio Ohshita, Osamu Morohara, Hirotaka Geka, Yoshitaka Moriyasu
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035303-035303-6 (2016)
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs
Externí odkaz:
https://doaj.org/article/efc7f18ef0514e1098b7c7ec08caedcc
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097140-097140-6 (2015)
By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, w
Externí odkaz:
https://doaj.org/article/b5b9e239210f4b6e93030d54d3822ae3
Autor:
Daisuke Kosemura, Yuki Mizukami, Munehisa Takei, Yohichiroh Numasawa, Yoshio Ohshita, Atsushi Ogura
Publikováno v:
AIP Advances, Vol 4, Iss 1, Pp 017133-017133-12 (2014)
100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the na
Externí odkaz:
https://doaj.org/article/5269a2ce6fe244cfb94750597a2627b6