Zobrazeno 1 - 10
of 533
pro vyhledávání: '"Yoshio, Nishi"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 322-328 (2019)
High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP.
Externí odkaz:
https://doaj.org/article/e8ea86e175c94538bb41c6eb2a9b89a0
Autor:
Suhas Kumar, Ziwen Wang, Noraica Davila, Niru Kumari, Kate J. Norris, Xiaopeng Huang, John Paul Strachan, David Vine, A.L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of neg
Externí odkaz:
https://doaj.org/article/9cacbc93e15e4d6faea02286889b8cf5
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058102-058102-10 (2018)
Segregation energy trends and their charge state dependence were established for Group II to Group VI substitutional metal dopants in HfO2 using density functional theory. Corroborating the segregation energy with dopant-oxygen bond lengths and charg
Externí odkaz:
https://doaj.org/article/d4648b563c844ff09e7c5d032289b5a6
Autor:
Yoshio Nishi
Publikováno v:
Journal of the Southeast Asian Linguistics Society, Vol 10, Iss 2, Pp i-xx (2017)
Philological evidence and comparative phonology confirm the existence of an initial ry- in Old Burmese and Proto-Lolo-Burmese, evidence that is over looked in much scholarship (e.g. Matisoff 1979, 1991, etc.).
Externí odkaz:
https://doaj.org/article/ad3656c075a147419ada737c068df6a4
Autor:
Zizhen Jiang, S. Simon Wong, Ethan C. Ahn, Ziwen Wang, Yoshio Nishi, H.-S. Philip Wong, Shengjun Qin, Scott W. Fong, Ji Cao, Xin Zheng, Hong-Yu Chen
Publikováno v:
IEEE Transactions on Electron Devices. 67:4904-4910
Increasing computation demand of machine learning (ML) applications (recommender system, image classification, speech recognition, and so on) calls for the development of specialized hardware for ML and neuromorphic computing. New memories, such as r
Publikováno v:
Chemistry of Materials. 31:8742-8751
Rutile structure IrO2 and the related alloy Ti1–xIrxO2 are studied by ab initio simulations. Iridium oxide attracts interest due its exotic metal–insulator transition which may have important appli...
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 322-328 (2019)
High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP.
Autor:
Antonio J. Ricco, Hye Ryoung Lee, Wah Chiu, Wang Xiao, Steven Chu, Yi Cui, Arturas Vailionis, Yoshio Nishi, Robin T. White, Lei Liao
Publikováno v:
Nano Letters
The global COVID-19 pandemic has changed many aspects of daily lives. Wearing personal protective equipment, especially respirators (face masks), has become common for both the public and medical professionals, proving to be effective in preventing s
Autor:
Xiaopeng Huang, David Vine, John Paul Strachan, Ziwen Wang, Yoshio Nishi, R. Stanley Williams, Suhas Kumar, Niru Kumari, Noraica Davila, A. L. David Kilcoyne, Kate J. Norris
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
Nature communications, vol 8, iss 1
Nature communications, vol 8, iss 1
Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the neg
Autor:
Xin Zheng, Zizhen Jiang, H.-S. Philip Wong, Hong-Yu Chen, Ziwen Wang, Yoshio Nishi, Scott W. Fong
Publikováno v:
IEEE Electron Device Letters. 38:863-866
We proposed an ultrafast accelerated retention test methodology for resistive random access memory (RRAM) using micro thermal stage (MTS). For accelerated retention test using chuck heating, the two major factors that limit the test speed are the att