Zobrazeno 1 - 10
of 390
pro vyhledávání: '"Yoshio, Honda"'
Autor:
Shin-ichiro Sato, Shuo Li, Andrew D. Greentree, Manato Deki, Tomoaki Nishimura, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Brant C. Gibson, Takeshi Ohshima
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022)
Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillar
Externí odkaz:
https://doaj.org/article/9e595a7de8d342c980fe04786a88c9a2
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-6 (2022)
Abstract As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate proce
Externí odkaz:
https://doaj.org/article/b031cd73f53e4a8495aa2c96e1ea0869
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 797-807 (2022)
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/G
Externí odkaz:
https://doaj.org/article/1f5d9dc0ce6a4a54a88802bd65a88721
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Toshiki Yui, Yotaro Wani, Tomomi Aratani, Hirotaka Watanabe, Hadi Sena, Yoshio Honda, Yasunori Igasaki, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almo
Externí odkaz:
https://doaj.org/article/be43e2cf600043c59677c0630e8c6dd3
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://doaj.org/article/802bb96512794ca8844a04843f7916f6
Autor:
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano
Publikováno v:
Crystals, Vol 13, Iss 3, p 524 (2023)
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of
Externí odkaz:
https://doaj.org/article/e06ef7dbabbb4438b4e0a78081bac773
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 011002 (2023)
ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric properties, holding promise for diverse electronic device applications. However, the interplay between its structural attributes and physical properties remains p
Externí odkaz:
https://doaj.org/article/5c4eb65fb1894a0198c138724c337199
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/27ec01ae60b04125a04d2c756228a71a
Autor:
Yusuke INOUE, Tomohiro NISHITANI, Anna HONDA, Daiki SATO, Haruka SHIKANO, Atsushi KOIZUMI, Yoshio HONDA, Daisuke ICHIHARA, Akihiro SASOH
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES. 66:10-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda39b6621d4731930797ba0e9692af3
https://doi.org/10.2322/tjsass.66.10
https://doi.org/10.2322/tjsass.66.10
Autor:
Atsushi Tanaka, Kentaro Nagamatsu, Shigeyoshi Usami, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Michal Bockowski, Hiroshi Amano
Publikováno v:
AIP Advances, Vol 9, Iss 9, Pp 095002-095002-4 (2019)
In this study, V-shaped dislocations in a GaN epitaxial layer on a free-standing GaN substrate were observed. Our investigation further revealed that the V-shaped dislocations were newly generated at the interface in the epilayer rather than propagat
Externí odkaz:
https://doaj.org/article/9e9c5f0b9cb2460494bd68b2884a7c1d