Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yoshinori Shishida"'
Publikováno v:
Japanese Journal of Applied Physics. 46:1951-1954
The barrier properties of divinyl siloxane-benzocyclobutene (DVS-BCB) films formed by plasma-enhanced polymerization were studied for ultralow-k porous silica (po-SiO) interlayer dielectrics. Time-dependent dielectric breakdown (TDDB) measurements of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a63b1d3833038503b52325d3aa308b
https://doi.org/10.1143/jjap.46.1951
https://doi.org/10.1143/jjap.46.1951
Autor:
T. Ono, Takenobu Yoshino, Hirofumi Tanaka, N. Fujii, Nobuhiro Hata, Yoshinori Shishida, H. Matsuo, T. Yamanishi, Syozo Takada, Kazuo Kohmura, Keizo Kinoshita, S. Hishiya, A. Ishikawa, R. Yagi, M. Shimoyama, S. Chikaki, Takamaro Kikkawa, T. Nakayama, J. Kawahara, Yutaka Seino
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
An advanced scalable Cu damascene process was developed using self-assembled porous silica with tetramethylcyclo-tetrasiloxane (TMCTS) treatment and selective electroless plating of Cu barrier. It is found that the TMCTS vapor treatment could recover
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b4697d90e3656489f3ed660c9ff1a85
https://doi.org/10.1109/iedm.2005.1609275
https://doi.org/10.1109/iedm.2005.1609275
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d481d6a00cf019f975a8805f8cfaaa13
https://doi.org/10.7567/ssdm.2006.g-9-6
https://doi.org/10.7567/ssdm.2006.g-9-6
Autor:
Takahiro Nakayama, Masahiro Yamaji, Nobuhiro Hata, Yoshinori Shishida, Takamaro Kikkawa, Yasuyoshi Hyodo
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7987578fea17f8cc5e0217be64398614
https://doi.org/10.7567/ssdm.2006.g-7-1l
https://doi.org/10.7567/ssdm.2006.g-7-1l
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa5f1571444e8f6c48f73ef684be823
https://doi.org/10.7567/ssdm.2006.g-8-3
https://doi.org/10.7567/ssdm.2006.g-8-3
Autor:
Takenobu Yoshino, T. Goto, N. Kunimi, R. Yagi, T. Ono, Keizo Kinoshita, N. Fujii, H. Matsuo, Yoshinori Shishida, Y. Uchida, J. Kawahara, S. Chikaki, T. Nakayama, Yutaka Seino, Takamaro Kikkawa, S. Takada, Hirofumi Tanaka, Akira Ishikawa, A. Shimoyama, S. Hishiya, Kazuo Kohmura, N. Hata, Y. Sonoda
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
Self-assembled porous-silica ultra low-k films (k=2.1) were integrated for 45-32 nm technology node low-k/Cu dual damascene interconnects. Porosity and pore size distributions of the low-k film were controlled by controlling the concentration of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08aeac31a3ce93da4fd2487d91a2c3e5
https://doi.org/10.1109/iitc.2005.1499919
https://doi.org/10.1109/iitc.2005.1499919
Autor:
N. Fujii, Takenobu Yoshino, M. Shimoyama, Takamaro Kikkawa, S. Chikaki, H. Tanaka, S. Hishiya, Yoshinori Shishida, Takahiro Nakayama, Akira Ishikawa, Keizo Kinoshita, K. Kohmura, Jun Kawahara, T. Yamanishi, Hisanori Matsuo, N. Hata, Ryotaro Yagi, T. Ono, Syozo Takada
Publikováno v:
ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..
This paper describes the extraction of process-induced damage in low-k/Cu damascene by comparing measured data of interline capacitances of Cu interconnects and parasitic capacitances between the line and the substrate with simulation results. The ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4072878dc43042d01bcd24ab0a91951e
https://doi.org/10.1109/issm.2005.1513395
https://doi.org/10.1109/issm.2005.1513395
Autor:
S. Chikaki, Yoshinori Shishida, Toshinori Takimura, Ryotaro Yagi, Takahiro Nakayama, Takamaro Kikkawa, Nobuhiro Hata, Nobutoshi Fujii, Jun Kawahara
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e8ca4aa99b4b9721abeaae801c5273
https://doi.org/10.7567/ssdm.2005.c-1-2
https://doi.org/10.7567/ssdm.2005.c-1-2
Autor:
Yoshinori Shishida, Hirofumi Tanaka, M. Shimoyama, Takamaro Kikkawa, Takenobu Yoshino, Ryotaro Yagi, Nobutoshi Fujii, Kazuo Kohmura, T. Yamanishi, T. Ono, Jun Kawahara, Takahiro Nakayama, Y. Sonoda, A. Ishikawa, Keizo Kinoshita, Hisanori Matsuo, S. Chikaki, S. Hishiya
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aacc07f9bc72c73dd718aec2ad03694
https://doi.org/10.7567/ssdm.2005.c-6-3
https://doi.org/10.7567/ssdm.2005.c-6-3
Autor:
S. Chikaki, Keizo Kinoshita, Yoshinori Shishida, Ryotaro Yagi, Takenobu Yoshino, Nobuhiro Hata, Takahiro Nakayama, Tetsuo Ono, Masashi Shimoyama, Yutaka Seino, Yuzuru Sonoda, Takamaro Kikkawa, Nobutoshi Fujii
Publikováno v:
Japanese Journal of Applied Physics. 48:095002
Integration of a self-assembled porous silica film layered with a cap film was carried out for low-k/Cu damascene structures. The dielectric constant of the porous silica in the layered damascene structure was extracted, and the process-induced damag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e7177468ff7a4719d6071ca60b8320
https://doi.org/10.1143/jjap.48.095002
https://doi.org/10.1143/jjap.48.095002