Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Yoshinori Kataoka"'
Autor:
Hidehiko YABUHARA, Akito SASAKI, Yoshinori KATAOKA, Koji SUZUKI, Takahiro ITO, Shigeyuki TAKAGI, Hideaki HIRABAYASHI
Publikováno v:
Electrochemistry, Vol 88, Iss 3, Pp 240-242 (2020)
We have demonstrated a novel semiconductor rechargeable battery (capacitor-like device), which uses electrons, holes and no mobile ions, having a TiOx/SiNy/NiOz laminated structure with a capacity 5000 times larger than that of a conventional paralle
Externí odkaz:
https://doaj.org/article/d3626cb7b4c14b2d86ccd4b596e38a82
Autor:
Akito Sasaki, Hideaki Hirabayashi, Hidehiko Yabuhara, Koji Suzuki, Shigeyuki Takagi, Takahiro Ito, Yoshinori Kataoka
Publikováno v:
Electrochemistry. 88:240-242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c13c4f657e358f1f0d9978c6162f6684
https://doi.org/10.5796/electrochemistry.19-00071
https://doi.org/10.5796/electrochemistry.19-00071
Autor:
Shigeyuki Takagi, Kouta Kitamura, Hideaki Hirabayashi, Yoshinori Kataoka, Akito Sasaki, Soramichi Takahashi
Publikováno v:
2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia).
We developed a new Li-ion battery with a low-resistance WO 3 negative electrode and confirmed its charging performance to be more than 2.4 times that of the electric double layer capacitor (EDLC) using regenerative power from a permanent magnet synch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b6e219f7469efa2d3bf0cb4783a933b
https://doi.org/10.1109/ipemc-ecceasia48364.2020.9368091
https://doi.org/10.1109/ipemc-ecceasia48364.2020.9368091
Autor:
Miho Nakamura, Kumpei Kobayashi, Akito Sasaki, Wei Li, Syuichi Saito, Hiroshi Iwai, Yoshinori Kataoka, Kazuo Tsutsui, Kuniyuki Kakushima, Hideyuki Oozu, Katsuaki Aoki
Publikováno v:
Microelectronics Reliability. 68:86-90
We evaluated the durability of a hexagonal tungsten oxide (h-WO 3 ) electrode for use as the negative electrode in lithium ion secondary batteries (LIBs). H-WO 3 has attracted attention as an electrode for LIBs owing to its large hexagonal tunnels, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f87815923ea638d5acc40a70525efd5
https://doi.org/10.1016/j.microrel.2016.11.015
https://doi.org/10.1016/j.microrel.2016.11.015
Autor:
Kumpei Kobayashi, Akito Sasaki, Syuichi Saito, Kuniyuki Kakushima, Hiroshi Iwai, Sasaki Atsuya, Yoshinori Kataoka, Kazuo Tsutsui
Publikováno v:
Electrochemistry. 85:310-314
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea4d517c55ab482779edc87577ce081
https://doi.org/10.5796/electrochemistry.85.310
https://doi.org/10.5796/electrochemistry.85.310
Autor:
Hiroshi Iwai, Yusuke Takei, Kazuo Tsutsui, Yoshinori Kataoka, Masayuki Kamiya, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi
Publikováno v:
physica status solidi (a). 212:1104-1109
A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734a9a51c37ab17d13bafab2eb5ea22c
https://doi.org/10.1002/pssa.201431645
https://doi.org/10.1002/pssa.201431645
Autor:
Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Hiroshi Iwai, Kenji Natori, Hideyuki Oozu, Nobuyuki Sugii, Wei Li, Akito Sasaki, Kuniyuki Kakushima, Akira Nishiyama, Katsuaki Aoki
Publikováno v:
Microelectronics Reliability. 55(2):402-406
Although a large amount of research on Li ion transportation has been carried out with the aim of improving the properties of lithium ion batteries, there has been little detailed research on electron conduction. Hence, we have been focusing on impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c760ad9979b0a969ced5587fccdfadd
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100801375
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100801375
Autor:
Yoshinori Kataoka, Akito Sasaki, Wei Li, Kazuo Tsutsui, Katsuaki Aoki, Hideyuki Oozu, Hiroshi Iwai, Akira Nishiyama, Kenji Natori, Hitoshi Wakabayashi, Kuniyuki Kakushima, Nobuyuki Sugii
Publikováno v:
Microelectronics Reliability. 55(2):407-410
We report a new approach for improving the recharging and discharging speed of lithium ion batteries based on understanding of the electron conduction mechanism of tungsten trioxide (WO 3 ) powder thin films fabricated from nanoparticles and used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3daf4b8c8257c8329c6189953bc03575
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100801614
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100801614
A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability
Autor:
Takanobu Watanabe, Kuniyuki Kakushima, Hiroshi Iwai, Kenji Natori, Nobuyuki Sugii, Kazuo Tsutsui, Keisaku Yamada, Kenji Ohmori, Hitoshi Wakabayashi, Yan Wu, Yoshinori Kataoka, Akira Nishiyama, Hiroyuki Hasegawa
Publikováno v:
Microelectronics Reliability. 54:899-904
A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e3fa37740331c190976cf42b30f8515
https://doi.org/10.1016/j.microrel.2014.01.023
https://doi.org/10.1016/j.microrel.2014.01.023
Autor:
Hiroshi Iwai, Kazuo Tsutsui, Hitoshi Wakabayashi, Wataru Saito, Yusuke Takei, Kuniyuki Kakushima, Yoshinori Kataoka, Mari Okamoto
Publikováno v:
ECS Transactions. 61:265-270
Mo/Al/Ti or TiN/TiSi2ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7124229b0e13e146b0ae830d921c54c
https://doi.org/10.1149/06104.0265ecst
https://doi.org/10.1149/06104.0265ecst