Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yoshinori Hayafune"'
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36fe07de1003b045a9fe85e62a6e732
https://doi.org/10.7567/ssdm.1999.d-2-1
https://doi.org/10.7567/ssdm.1999.d-2-1
Autor:
Katsuhiko Nishiguchi, Bruce J. Hinds, S. Hatatani, Shunri Oda, Yoshinori Hayafune, Shinji Hara, S-P. Lee, Amit Dutta
Publikováno v:
Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd6bb75634c6ca724d9f54530345c76b
https://doi.org/10.7567/ssdm.1998.c-2-1
https://doi.org/10.7567/ssdm.1998.c-2-1
Publikováno v:
Japanese Journal of Applied Physics. 39:L855
Single electron nonvolatile memory devices are fabricated using a narrow and short channel transistor and silicon nanocrystals as a floating gate. The silicon nanocrystals are deposited by very-high-frequency plasma processing. This deposition techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bbf437782ffe09ab9f633d8a265b18b
https://doi.org/10.1143/jjap.39.l855
https://doi.org/10.1143/jjap.39.l855
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2857
A simple but potent method for electron-beam (EB) direct writing is introduced. This method is based on the use of negative electron-beam resist RD2000N. The resist offers high sensitivity to EB exposure and high resistance to halide plasma etching c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af269d27580f8e65365bf6ee8580ed9
https://doi.org/10.1116/1.1323969
https://doi.org/10.1116/1.1323969
Autor:
Masahiro Watanabe, Shigehisa Arai, Xue–Ying Jia, Shigeo Tamura, Takashi Kojima, Yoshinori Hayafune
Publikováno v:
Japanese Journal of Applied Physics. 37:5961
We investigated a size fluctuation of 50 nm periodic wire pattern of GaInAsP/InP structure with a typical wire width of around 30 nm, which was fabricated by an electron beam lithography followed by wet chemical etching. The size fluctuation of the Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c51e4470aa362240fefda66cd17637
https://doi.org/10.1143/jjap.37.5961
https://doi.org/10.1143/jjap.37.5961
Autor:
Takashi Kojima, Takashi Kojima, Xue-Ying Jia, Xue-Ying Jia, Yoshinori Hayafune, Yoshinori Hayafune, Shigeo Tamura, Shigeo Tamura, Masahiro Watanabe, Masahiro Watanabe, Shigehisa Arai, Shigehisa Arai
Publikováno v:
Japanese Journal of Applied Physics; November 1998, Vol. 37 Issue: 11 p5961-5961, 1p