Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Yoshinobu Sugiyama"'
Autor:
Masayuki Shoji, Yoshio Goshima, Kohtaro Takei, Fumio Nakamura, Takashi Nakayama, Nobuhisa Mizuki, Yukio Sasaki, Qi Cheng, Yoshinobu Sugiyama, Hideaki Tanaka
Publikováno v:
Molecular and Cellular Neuroscience. 24:632-645
Ephrin-As are repulsive axonal guidance cues that regulate retinotectal projection. EphA tyrosine kinases, which are the receptors of ephrin-As, activate signaling cascades leading to cytosckeleton reorganization. Here, we address the role of cyclin-
Autor:
Jonathan P. Bird, Takeyoshi Sugaya, Mutsuo Ogura, Kenji Yonei, Yoshinobu Sugiyama, Kee-Youn Jang, T. Shimizu, David K. Ferry
Publikováno v:
Physica B: Condensed Matter. 314:99-103
The influence of temperature and drive current on the Shubnikov-de Haas oscillations is studied as a means to investigate the nature of the electron–phonon interaction in an etched InGaAs quantum wire. The temperature dependence of the energy-relax
Publikováno v:
Solid-State Electronics. 45:1099-1105
We investigate the gate-length dependence of negative differential resistance (NDR) in a ridge-type InGaAs/InAlAs quantum wire field-effect transistor with a gate varying from 50 nm to 1 μm in length. The gate leakage current is detectable only with
Publikováno v:
Physica B: Condensed Matter. 272:117-122
N-shaped negative differential resistance (NDR) with high peak-to-valley ratio (PVR) and low onset voltage (VNDR) are clearly observed in a 50-nm gate ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWR-FET). The NDR of low onset volta
Publikováno v:
Journal of Crystal Growth. :833-836
A field effect transistor (FET) using In 0.53 Ga 0.47 As quasi-quantum-wires (quasi-QWRs) as a channel has been fabricated. The quasi-QWR structures have been fabricated by selective growth using molecular beam epitaxy on nonplanar InP substrates. Th
Publikováno v:
Journal of Crystal Growth. 186:27-32
GaAs/AlGaAs quantum-wire structures on V-grooved substrates have been fabricated under As 2 flux by molecular beam epitaxy. Under As 2 flux, a smaller number of Ga atoms migrate than those under As 4 flux to the V-groove bottom from the side-wall sur
Autor:
Yoshinobu Sugiyama
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 117:492-496
Publikováno v:
Materials Science Forum. :1939-1942
Autor:
Tetsuya Tada, Xue Lun Wang, Masanori Komuro, Toshimi Wada, Toshihiko Kanayama, Yoshinobu Sugiyama
Publikováno v:
Materials Science Forum. :1455-1460
Autor:
Yoshinobu Sugiyama
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 115:793-798