Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yoshinobu Kawaguchi"'
Autor:
Yoshinobu Kawaguchi, Kentaro Murakawa, Motohisa Usagawa, Yuuta Aoki, Kazuma Takeuchi, Takeshi Kamikawa
Publikováno v:
Crystal Growth & Design. 23:3572-3578
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860478743deb2536796575785f6c3981
https://doi.org/10.1021/acs.cgd.3c00070
https://doi.org/10.1021/acs.cgd.3c00070
Publikováno v:
Journal of the Robotics Society of Japan. 18:683-689
Recently, the needs of robot systems for human support such as a master-slave manipulator, a teleoperation robot and a power assist robot have been increasing. In such human-robot systems, a human operator has an initiative in executing a task, while
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c35cab8d54de5f9a5f1ae2f1dd05836
https://doi.org/10.7210/jrsj.18.683
https://doi.org/10.7210/jrsj.18.683
Publikováno v:
MRS Proceedings. 798
The dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d866540fc261f133c98cf87ad04fb3d
https://doi.org/10.1557/proc-798-y10.12
https://doi.org/10.1557/proc-798-y10.12
Autor:
S. P. DenBaars, Ravi Shivaraman, Yoshinobu Kawaguchi, Shuji Nakamura, Shinichi Tanaka, James S. Speck
Publikováno v:
Applied Physics Letters. 102:251104
Comparative analysis was performed on 202¯1 and 202¯1¯ semipolar light emitting diodes using atom probe tomography. The quantification of 3D Indium distribution in the single quantum well (SQW) active region in these devices revealed a higher Indi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e324040d2d86403d355f4bd9798b836
https://doi.org/10.1063/1.4812363
https://doi.org/10.1063/1.4812363
Autor:
Yoshinobu Kawaguchi, Yuh-Renn Wu, Chia-Yen Huang, Shuji Nakamura, Steven P. DenBaars, Yuji Zhao
Publikováno v:
Japanese Journal of Applied Physics. 52:08JC08
We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (202̄1) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279044fbcba4e78748d163ddbb53d7f6
https://doi.org/10.7567/jjap.52.08jc08
https://doi.org/10.7567/jjap.52.08jc08
Autor:
Shinichi Tanaka, Feng Wu, Shuji Nakamura, Kenji Fujito, Yoshinobu Kawaguchi, Steven P. DenBaars, Sang Ho Oh, Yuji Zhao, James S. Speck
Publikováno v:
Applied Physics Express. 6:062102
We study the optical spectral properties for green semipolar (20) and (201) light-emitting diode (LED) with same indium compositions. Compared to (201) devices, the fabricated (20) micro-LED (?0.005 mm2) showed negligible blue shift and smaller full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8807295dc93cb64b3217d2984b7e02a8
https://doi.org/10.7567/apex.6.062102
https://doi.org/10.7567/apex.6.062102
Autor:
Steven P. DenBaars, James S. Speck, Yuji Zhao, Shih Chieh Huang, Yoshinobu Kawaguchi, Robert M. Farrell, Shuji Nakamura
Publikováno v:
Applied Physics Express. 6:052103
The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3068753f3419b123384b03602467b274
https://doi.org/10.7567/apex.6.052103
https://doi.org/10.7567/apex.6.052103
Autor:
Shuji Nakamura, Kenji Fujito, James S. Speck, Yoshinobu Kawaguchi, Yuji Zhao, Chia-Yen Huang, Feng Wu, Shinichi Tanaka, Steven P. DenBaars
Publikováno v:
Applied Physics Letters. 102:091905
We report on void defect formation in (202¯1¯) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with {101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7304ada67e11211dab5e4a78996723a4
https://doi.org/10.1063/1.4794864
https://doi.org/10.1063/1.4794864
Autor:
Chih Chien Pan, Daniel F. Feezell, Shuji Nakamura, Kenji Fujito, Yuh-Renn Wu, Qimin Yan, Chia-Yen Huang, Yuji Zhao, Shinichi Tanaka, Yoshinobu Kawaguchi, Steven P. DenBaars, Chris G. Van de Walle
Publikováno v:
Applied Physics Letters. 100:231110
We investigate the influence of polarity on carrier transport in single-quantum-well and multiple-quantum-well (MQW) light-emitting diodes (LEDs) grown on the semipolar (202¯1) and (2021¯) orientations of free-standing GaN. For semipolar MQW LEDs w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c122b4524c3cbd87389cefbd91d45c
https://doi.org/10.1063/1.4726106
https://doi.org/10.1063/1.4726106
Autor:
Yoshinobu Kawaguchi, Po Shan Hsu, Shih Chieh Huang, James S. Speck, Chih Chien Pan, Chia-Yen Huang, Shinichi Tanaka, Shuji Nakamura, Kenji Fujito, Qimin Yan, Chris G. Van de Walle, Steven P. DenBaars, Yuji Zhao, Daniel F. Feezell
Publikováno v:
Applied Physics Letters. 100:201108
We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (202¯1¯) and (112¯2) planes have the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33329d95ab9d5fb1be31b1a70cb412d0
https://doi.org/10.1063/1.4719100
https://doi.org/10.1063/1.4719100