Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yoshinobu, SAKURAI"'
Autor:
Kyousuke, HATTORI, Masamitu, KASUKAWA, Satoshi, MATSUMURA, Yoshinobu, SAKURAI, Nobuyuki, FUKUDOME, Hisanaga, KUROKI, Noboru, FUJITANI
Publikováno v:
千葉科学大学紀要. 4:89-96
古武術は古くから日本に伝わる武術であり、古武術の体の動かし方をヒントに介護技術に応用したのが「古武術介護」である。全身を連動させ無理なく効率的に動きを引き出すことがで
Autor:
Yasuhiro Yamamoto, Yasuhiro Obara, Yoshinobu Sakurai, Masataka Satoh, Tetsu Ohsuna, Tomoyasu Inoue
Publikováno v:
Journal of Crystal Growth. 131:347-351
The microscopic structure of epitaxially grown CeO2(110) layers on Si(100) substrates is investigated using high-resolution electron microscopic techniques. Surface morphology observations using high-resolution secondary electron microscopy indicate
Publikováno v:
Chemistry Letters. 21:2005-2008
Guest binding ability of N-(l-pyrenecarbonyl)-3A-amino-3A-deoxy-(2AS,3AS)-γ-cyclodextrin (1) was evaluated by its fluorescence intensity variation induced by guest, and compared with that of primary hydroxyl side modified analogue (2). The results s
Publikováno v:
Tetsu-to-Hagane. 76:1195-1201
Autor:
T. Ohsuna, L. Luo, Yoshinobu Sakurai, Yasuhiro Yamamoto, C. J. Maggiore, X. D. Wu, J. H. Chang, Tomoyasu Inoue
Publikováno v:
Applied Physics Letters. 59:3604-3606
CeO2 layers epitaxially grown on (100) silicon substrates by electron‐beam evaporation were investigated and proved to have (110) orientation. X‐ray diffraction measurements showed the CeO2 layers consist of more than 98% volume fraction of the (
Autor:
Masataka Satoh, Yasuhiro Yamamoto, Tonioyasu Inoue, Shigeyuki Nakajima, Tetsu Ohsuna, Yoshinobu Sakurai
Publikováno v:
MRS Proceedings. 312
Epitaxially grown CeO2 layers on (100)Si substrates are studied using the RBS/channeling technique. The crystallographic correlation between the overgrown layers and off-oriented Si substrates is precisely analyzed by means of constructing stereograp
Autor:
L. Luo, Tomoyasu Inoue, Yasuhiro Yamamoto, Yoshinobu Sakurai, Carl J. Maggiore, Tetsu Ohsuna, X. D. Wu
Publikováno v:
MRS Proceedings. 237
Cerium dioxide (CeO2) layers epitaxially grown on (100), (111) and (110) silicon substrates by electron beam evaporation in an ultra-high vacuum were investigated. CeO2 layers on Si (111) substrates were proved to be epitaxially grown at the substrat
Publikováno v:
HETEROCYCLES. 49:469
Publikováno v:
HETEROCYCLES. 35:559
γ-Cyclodextrins bearing a pyrenylamide moiety at primary or secondary hydroxyl side (1 and 2, respectively) showed red-shifted fluorescence as well as normal fluorescence in a solution of pH below 3. This red-shifted fluorescence was emitted from th
Autor:
Takayuki Nozawa, Tomoyasu Inoue, Yoshinori Yamada, Eiji Sasaki, Yasuhiro Yamamoto, Youichi Itoh, Kiyoshi Wakamatsu, Tetsu Ohsuna, Yoshinobu Sakurai
Publikováno v:
Japanese Journal of Applied Physics. 31:L1736
The texture structure of epitaxially grown CeO2(110) layers on Si(100) substrates was investigated using high-resolution electron microscopy. Surface morphology observations using high-resolution secondary electron microscopy indicated that the layer