Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yoshimitsu Hiroshima"'
Autor:
Kuriyama Toshihiro, Yoshikazu Sano, Hirotatu Kodama, Yoshimitsu Hiroshima, Masanori Ohmae, Takumi Yamaguchi, Masaji Asaumi, Tsutomu Imanishi, Shin-ichi Tashiro
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 49:182-187
A 1/4-inch format 560 k pixel IT-CCD image sensor was developed with a high-resolution electronic image stabilizing system that uses a driving method and novel process technology. The new pixel design, process, and on-chip color filter technology kee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65e1863cc781cc5e6b6898454d1583a
https://doi.org/10.3169/itej1978.49.182
https://doi.org/10.3169/itej1978.49.182
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 44:110-115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436c1d93b2d4416bb8b7331e4c0389cd
https://doi.org/10.3169/itej1978.44.110
https://doi.org/10.3169/itej1978.44.110
Autor:
Sumio Terakawa, Masahiro Susa, Tohru Takamura, Matsumoto Shigenori, Kuriyama Toshihiro, Yoshimitsu Hiroshima, Kohji Senda
Publikováno v:
Journal of Applied Physics. 58:3880-3883
A new fabrication process for solid‐state imagers based on the borophosphosilicate glass (BPSG) flow has been developed. It was found that well‐designed tapered steps can be obtained even at low temperatures with the use of BPSG, which can be cle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c61650f8478df3d9bf85b5f33b289147
https://doi.org/10.1063/1.335606
https://doi.org/10.1063/1.335606
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 70:9-15
This paper proposes a two-dimensional photosensor composed of an a-Si pin junction. The photosensor is constructed on the glass substrate. The pixel of the sensor is of a simple structure composed of two photodiodes connected in opposite directions b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1d90a4337ce5a0e7c7080acc5fb180
https://doi.org/10.1002/ecjb.4420701002
https://doi.org/10.1002/ecjb.4420701002
Fixed pattern noise in the solid‐state imagers due to the striations in Czochralski silicon crystals
Autor:
T. Kunii, Masahiro Susa, Yoshimitsu Hiroshima, Kuriyama Toshihiro, Sumio Terakawa, Matsumoto Shigenori, Kohji Senda
Publikováno v:
Journal of Applied Physics. 57:1369-1372
The concentric circle pattern of growth striations in Czochralski (CZ) silicon wafer has been found to cause the fixed pattern noise in the reproduced image by solid‐state imagers with the p‐well structure. The microgrowth striations of dopant im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd992c87def42f183c7cd868be8445ff
https://doi.org/10.1063/1.334488
https://doi.org/10.1063/1.334488
Publikováno v:
Journal of Applied Physics. 63:2633-2636
The growth length of single silicon crystals obtained by laser annealing was investigated in detail as a function of the scanning direction of the laser beam in the lateral seeding process on (100), (110), and (111) silicon substrates. It was found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dcd689d280c79231fd626c54fafb8f
https://doi.org/10.1063/1.341174
https://doi.org/10.1063/1.341174
Publikováno v:
Electronics and Communications in Japan (Part I: Communications). 67:100-107
The performance of CCD image sensors is strongly influenced by the crystal quality of the silicon wafer because it is an analog VLSI device which measures optical signals. In order to examine the relation between the imaging characteristics of the se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56ea9bfb0d906b507603f1ba0306f448
https://doi.org/10.1002/ecja.4400670512
https://doi.org/10.1002/ecja.4400670512
Autor:
Kuriyama Toshihiro, Takao Kunii, Yoshimitsu Hiroshima Yoshiaki Sone, Kenju Horii, Takao Kuroda
Publikováno v:
Extended Abstracts of the1983 Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2cab85512f219ab6ff8d25c028e859
https://doi.org/10.7567/ssdm.1983.a-7-10ln
https://doi.org/10.7567/ssdm.1983.a-7-10ln
Autor:
Sumio Terakawa, Yuji Matsuda, Takao Kunii, Yoshimitsu Hiroshima, Kohji Senda, Matsumoto Shigenori
Publikováno v:
Extended Abstracts of the1983 Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c72a2e8177bcda3d41a059749f05b0bc
https://doi.org/10.7567/ssdm.1983.b-4-9
https://doi.org/10.7567/ssdm.1983.b-4-9
Publikováno v:
Journal of The Electrochemical Society. 133:1517-1518
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319d7c68e92db161974fec8aac8e3183
https://doi.org/10.1149/1.2108947
https://doi.org/10.1149/1.2108947