Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Yoshikazu Terai"'
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105028-105028-9 (2018)
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Ram
Externí odkaz:
https://doaj.org/article/c32a256c710b490cbc09902ab46a4b4a
Autor:
Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii
Publikováno v:
Solar Energy. 211:383-395
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4bf7fd4ed8c49b5c30287799c3273e7
https://doi.org/10.1016/j.solener.2020.09.085
https://doi.org/10.1016/j.solener.2020.09.085
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1003
Aluminum nitride (AlN) thin films were grown by pressure gradient sputtering (PGS) and conventional sputtering methods. A pressure gradient with low pressure at a substrate position was measured only in the PGS method. AlN films highly oriented along
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4fd15dfa81d3785a690609c6abbd234
https://doi.org/10.35848/1347-4065/ac762f
https://doi.org/10.35848/1347-4065/ac762f
Publikováno v:
The journal of physical chemistry letters. 12(12)
Photoluminescence (PL) emission of colloidal PbSe/CdSe core/shell quantum dots (QDs, CdSe shell thickness: 0.2 nm) at the lowest exciton state was investigated at room temperature and varying inter-QD distance (L = 7-240 nm) by changing the QD concen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eda2cef64ed325aa9196dfc82e93e98f
https://pubmed.ncbi.nlm.nih.gov/33755486
https://pubmed.ncbi.nlm.nih.gov/33755486
Publikováno v:
Defect and Diffusion Forum. 386:38-42
Sb-doped β-FeSi2 epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi2. After an optimization of donor activation conditions in the Sb-doped β-FeSi2, the electron density of 6 × 1018 cm-3 at 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ecd12a0dd8a410900652d42216ee429
https://doi.org/10.4028/www.scientific.net/ddf.386.38
https://doi.org/10.4028/www.scientific.net/ddf.386.38
Publikováno v:
Defect and Diffusion Forum. 386:43-47
Infrared (IR) absorption and polarized Raman spectra were measured in BaSi2 epitaxial films to investigate the vibrational modes and the symmetry of Si4 cluster in BaSi2. By an analysis based on Raman and/or IR activity in the spectra, the symmetry o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac6f666cf4ea491550138c77aed171d
https://doi.org/10.4028/www.scientific.net/ddf.386.43
https://doi.org/10.4028/www.scientific.net/ddf.386.43
Publikováno v:
Defect and Diffusion Forum. 386:33-37
Semiconducting ruthenium silicide (Ru2Si3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru2Si3 phase was confirmed by XRD and Raman measurements when the amorphous layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2de2303e8fbc0c0e1be423db0321a45
https://doi.org/10.4028/www.scientific.net/ddf.386.33
https://doi.org/10.4028/www.scientific.net/ddf.386.33
Autor:
Kaoru Toko, Kazuhiro Gotoh, Takuma Sato, Zhihao Xu, Sho Aonuki, Takashi Suemasu, Noritaka Usami, Yudai Yamashita, Yoshikazu Terai
Publikováno v:
Applied Physics Express. 13:051001
We grew 500-nm-thick lightly As-doped n-BaSi2 epitaxial films at 600 °C by molecular beam epitaxy, and supplied atomic H in durations (t BaSi:H) of 0–30 min, followed by capping with a 3-nm-thick amorphous Si layer at 180 °C. The photoresponsivit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e763cbd7c3344a1469a04700190fbda8
https://doi.org/10.35848/1882-0786/ab8725
https://doi.org/10.35848/1882-0786/ab8725
Publikováno v:
Japanese Journal of Applied Physics. 59:SFFC01
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88cce71f9b8fcb7d585a458fb3f6cdf
https://doi.org/10.7567/1347-4065/ab656e
https://doi.org/10.7567/1347-4065/ab656e
Autor:
Dong-gun Lee, Atsushi Nishikawa, Hironori Ofuchi, Yoshikazu Terai, Kosuke Kawabata, Tetsuo Honma, Atsushi Koizumi, Yasufumi Fujiwara
Publikováno v:
Optical Materials. 41:75-79
We have succeeded in situ Eu doping into Al x Ga 1 − x N grown by organometallic vapor phase epitaxy and investigated the effects of the growth pressure and Al composition on the photoluminescence (PL) properties of Eu 3+ ions. The intensity of red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e50ff1e34abd610e9e2a90ddfdb3e2
https://doi.org/10.1016/j.optmat.2014.11.005
https://doi.org/10.1016/j.optmat.2014.11.005