Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yoshiji Inoue"'
Autor:
P. Fischer, Kenzo Maehashi, Takehiro Nishida, Jürgen Christen, Hisao Nakashima, Takehiko Kato, Dieter Bimberg, Marius Grundmann, Koichi Inoue, T. Takeuchi, Yoshiji Inoue
Publikováno v:
Materials Science and Engineering: B. 51:229-232
GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) surfaces with coherently aligned giant growth steps due to thickness modulation at step edges. Two-step growth with growth interruption is employed to improve uniformity and confinem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d7deeb17e4952505a5c58994464c8c
https://doi.org/10.1016/s0921-5107(97)00266-3
https://doi.org/10.1016/s0921-5107(97)00266-3
Autor:
Marius Grundmann, P. Fischer, Koichi Inoue, Kenzo Maehashi, Yoshiji Inoue, Takehiko Kato, Hisao Nakashima, T. Takeuchi, Misaichi Takeuchi, Jürgen Christen, Dieter Bimberg
Publikováno v:
Superlattices and Microstructures. 22:43-49
GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de9d7b9e50fa325848ad6894f48a258a
https://doi.org/10.1006/spmi.1996.0281
https://doi.org/10.1006/spmi.1996.0281
Autor:
Yoshiji Inoue, P. Fischer, Jürgen Christen, Hisao Nakashima, T. Takeuchi, Misaichi Takeuchi, Koichi Inoue, Dieter Bimberg, Marius Grundmann
Publikováno v:
Physica B: Condensed Matter. 227:291-294
Two size-dependent photoluminescence peaks are observed for GaAs quantum wires naturally formed on vicinal GaAs(1 1 0) surfaces with giant steps by molecular beam epitaxy. These two peaks are found to have different activation energies from the tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::998e7274c71f92233d33febdf3560b77
https://doi.org/10.1016/0921-4526(96)00423-1
https://doi.org/10.1016/0921-4526(96)00423-1
Publikováno v:
Applied Physics Letters. 72:465-467
Stacked GaAs quantum wires (QWRs) are grown on the surfaces with giant steps which are naturally formed on vicinal GaAs(110) substrates by molecular beam epitaxy. Transmission electron microscopy observation clearly shows stacked structures of cohere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10adef4fc3a95ba18b73de434f958cff
https://doi.org/10.1063/1.120787
https://doi.org/10.1063/1.120787
Publikováno v:
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ea34e35a00fbb902fcbedf987c42f21
https://doi.org/10.7567/ssdm.1996.la-6
https://doi.org/10.7567/ssdm.1996.la-6