Zobrazeno 1 - 10
of 405
pro vyhledávání: '"Yoshiji Horikoshi"'
Autor:
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027120-027120-7 (2015)
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED
Externí odkaz:
https://doaj.org/article/04cdc22b600a441dab74a284a6fcb195
Publikováno v:
Journal of Crystal Growth. 477:25-29
We investigate the behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces by the intensity measurement of the specular spot of the reflection high-energy electron diffraction. Characteristics of these two surfaces are very different. For (
Autor:
Toshio Takeuchi, Yoshiji Horikoshi
Publikováno v:
Nanostructures in Energy Generation, Transmission and Storage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::049eed804cc4f6262b79be49dc758403
http://www.intechopen.com/articles/show/title/nanostructured-si-sio2-quantum-wells
http://www.intechopen.com/articles/show/title/nanostructured-si-sio2-quantum-wells
Autor:
Hajime Asahi, Yoshiji Horikoshi
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
The evolution of III–V semiconductor detectors over the past 60 years has been dramatic, from the first InSb photodiodes to modern‐day molecular beam epitaxy (MBE)‐grown barrier detectors with a very high level of performance. Examples are give
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1337574d07d98f6947daafa725abb4f2
https://doi.org/10.1002/9781119354987.ch15
https://doi.org/10.1002/9781119354987.ch15
Autor:
Yoshiji Horikoshi, Hajime Asahi
Publikováno v:
Molecular Beam Epitaxy
Molecular Beam Epitaxy, John Wiley & Sons Ltd, pp.233-246, 2019, 978-1-119-35502-1. ⟨10.1002/9781119354987.ch14⟩
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy, John Wiley & Sons Ltd, pp.233-246, 2019, 978-1-119-35502-1. ⟨10.1002/9781119354987.ch14⟩
Molecular Beam Epitaxy ISBN: 9781119354987
We review the developments in the growth by molecular‐beam epitaxy (MBE) of III–Sb compound semiconductors and heterostructures for optoelectronic device applications. After discussing the peculiarities of antimonides and their potential for opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8533b7d0a30b7c9c9dd000a197b6f44d
https://hal.umontpellier.fr/hal-02342601
https://hal.umontpellier.fr/hal-02342601
Autor:
Yoshiji Horikoshi, Hajime Asahi
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
The fundamental setup of a molecular beam epitaxy (MBE) system has been discussed. Understanding of the growth mechanism of MBE has progressed during the last two decades, through observations by reflection high‐energy electron diffraction (RHEED)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::382101730559cb1906ed4693f8684dae
https://doi.org/10.1002/9781119354987.ch2
https://doi.org/10.1002/9781119354987.ch2
Autor:
Yoshiji Horikoshi, Hajime Asahi
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
As the continuous scaling of complementary metal–oxide–semiconductor (CMOS) technology approaches its limit, spintronics has received tremendous attention as it could promise next‐generation devices with non‐volatile and low variability. In p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b071b4069c491ce908614c6f6c2be23
https://doi.org/10.1002/9781119354987.ch21
https://doi.org/10.1002/9781119354987.ch21
Autor:
Yoshiji Horikoshi, Hajime Asahi
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
Bi‐containing III–V semiconductors such as GaAs 1−x Bi x and related semiconductors allow high flexibility in bandgap engineering and the modification of the band structure, resulting in materials with a temperature‐insensitive bandgap or a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::571fc5c2e1baf2aaaf5ef2038035cdb0
https://doi.org/10.1002/9781119354987.ch23
https://doi.org/10.1002/9781119354987.ch23
Autor:
Hajime Asahi, Yoshiji Horikoshi
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
In this chapter I summarise a history of molecular beam epitaxy (MBE). I begin by discussing the origins of the method, including the early work of Joyce at Plessey, Arthur and Cho at Bell Labs and our later work at Philips, where reflection high ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f057e55a070ea70f62cd1cc5451c2a93
https://doi.org/10.1002/9781119354987.ch1
https://doi.org/10.1002/9781119354987.ch1