Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yoshihito Katsu"'
Publikováno v:
Materials Science Forum. 897:340-343
Surface morphology and electrical properties of silicon dioxide (SiO2) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-ME
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad435c5a2e27955f32a3bc5fd25f2e1
https://doi.org/10.4028/www.scientific.net/msf.897.340
https://doi.org/10.4028/www.scientific.net/msf.897.340
Autor:
Takayoshi Shimura, Tsunenobu Kimoto, Heiji Watanabe, Takuji Hosoi, Yoshihito Katsu, Yuichiro Nanen
Publikováno v:
Materials Science Forum. 858:599-602
We evaluated the effect of NO annealing on hole trapping characteristic of SiC metal-oxide-semiconductor (MOS) capacitor by measuring flatband voltage (VFB) shifts during a constant negative gate voltage stress under UV illumination. Under low stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cb050c1fa35edf0aff835c14c54028d
https://doi.org/10.4028/www.scientific.net/msf.858.599
https://doi.org/10.4028/www.scientific.net/msf.858.599
Autor:
Yoshiyuki Yonezawa, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Daisuke Nagai, Yoshihito Katsu, Heiji Watanabe, Hidenori Tsuji
Publikováno v:
Japanese Journal of Applied Physics. 57:120304
An n-channel metal–oxide–semiconductor field-effect transistor (MOSFET) with high field-effect mobility (μFE) on 4H-SiC (0001) was fabricated using an ultrahigh-temperature gate-oxidation technique, and its improved channel mobility was demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6858d01abcb99eeb19e4259eb88bfd9
https://doi.org/10.7567/jjap.57.120304
https://doi.org/10.7567/jjap.57.120304
Autor:
Takuji Hosoi, Mitsuru Sometani, Heiji Watanabe, Yoshihito Katsu, Kidist Moges, Hidenori Tsuji, Takayoshi Shimura, Daisuke Nagai
Publikováno v:
Applied Physics Express. 11:091301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a76e466ae9571c819aaf28ae866b4c
https://doi.org/10.7567/apex.11.091301
https://doi.org/10.7567/apex.11.091301
Autor:
Takuji Hosoi, Manabu Takei, Takayoshi Shimura, Heiji Watanabe, Daisuke Nagai, Mitsuru Sometani, Yoshihito Katsu, Yoshiyuki Yonezawa
Publikováno v:
Japanese Journal of Applied Physics. 56:04CR04
We conducted a rapid water-quenching procedure with ultrahigh-temperature oxidation to avoid degradation of the high-quality SiO2/SiC interface formed by ultrahigh-temperature oxidation during the cooling process. A reduction in the interface state d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eec5ab189222aa0946c484fca48f558
https://doi.org/10.7567/jjap.56.04cr04
https://doi.org/10.7567/jjap.56.04cr04
Publikováno v:
Japanese Journal of Applied Physics. 55:120303
Metal-enhanced oxidation (MEO) using ultrathin Ba layers on 4H-SiC surfaces was investigated by physical and electrical characterizations. We found that while comparable oxidation rates were enhanced for Si- and C-face surfaces even at a low temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7475e043724a465ea452f3234814139f
https://doi.org/10.7567/jjap.55.120303
https://doi.org/10.7567/jjap.55.120303
Autor:
Manabu Takei, Takuji Hosoi, Hironori Takeda, Heiji Watanabe, Mitsuru Sometani, Daisuke Nagai, Takayoshi Shimura, Yoshihito Katsu
Publikováno v:
Applied Physics Letters. 109:182114
Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces in dry O2 ambient was performed at temperatures up to 1700 °C. The temperature dependence of the reaction-limited linear growth rate of a thermal SiO2 layer revealed that not act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061ebd444991b64a9c5c0ea1d07ac493
https://doi.org/10.1063/1.4967002
https://doi.org/10.1063/1.4967002
Autor:
Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani, Yoshihito Katsu, Hironori Takeda, Takayoshi Shimura, Manabu Takei, Heiji Watanabe
Publikováno v:
Applied Physics Letters; 10/31//2016, Vol. 109 Issue 18, p182114-1-182114-5, 5p, 5 Graphs
Autor:
Mitsuru Sometani, Yoshihito Katsu, Daisuke Nagai, Hidenori Tsuji, Takuji Hosoi, Takayoshi Shimura, Yoshiyuki Yonezawa, Heiji Watanabe
Publikováno v:
Japanese Journal of Applied Physics; Dec2018, Vol. 57 Issue 12, p1-1, 1p
Autor:
Mitsuru Sometani, Daisuke Nagai, Yoshihito Katsu, Takuji Hosoi, Takayoshi Shimura, Manabu Takei, Yoshiyuki Yonezawa, Heiji Watanabe
Publikováno v:
Japanese Journal of Applied Physics; Apr2017, Vol. 56 Issue 4S, p1-1, 1p