Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yoshihisa Ohishi"'
Autor:
Nobuyuki Urushihara, Takashi Shiozawa, Kuniyuki Kakushima, Parhat Ahmet, Koji Nagahiro, Yoshihisa Ohishi, Kazuo Tsutsui, Hiroshi Iwai, Mineharu Suzuki
Publikováno v:
Microelectronic Engineering. 85:2000-2004
The direct deposition of a thin Al or B layer at Ni/Si interface was proposed as a new method to solve a problem of degraded thermal stability of Ni silicide on heavily doped N^+-Si substrates. Significant improvement of thermal stability evaluated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c1cf07b5787f0c6d460308da8d92012
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100588871
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100588871
Autor:
Yoshihisa Ohishi, Hiroshi Iwai, Kazuo Tsutsui, Parhat Ahmet, Wataru Hosoda, Kuniyuki Kakushima, Kohei Noguchi
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c332599dda1de08b3a8715d6bc4a487
https://doi.org/10.1109/iwjt.2010.5474989
https://doi.org/10.1109/iwjt.2010.5474989
Autor:
Yoshihisa Ohishi, Keiko Tsukamoto, Shigehiro Takahashi, Akira Ohishi, Akihiko Saitoh, Tomoo Nakamura, Naoki Ito, Masami Morotomi, Yukiko Nanba, Yushi Ito, Satsuki Kakiuchi
Publikováno v:
The Journal of pediatrics. 156(4)
We report the one case of sepsis caused by Bifidobacterium breve administered as probiotic therapy. Probiotics can be a potential cause of an invasive disease and should be used with care in vulnerable patients.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f5507163d4d4b7726abb6e67d1cb11b
https://pubmed.ncbi.nlm.nih.gov/20303445
https://pubmed.ncbi.nlm.nih.gov/20303445
Autor:
Mineharu Suzuki, Nobuaki Urushihara, Hiroshi Iwai, Koji Nagahiro, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshihisa Ohishi, Takashi Shiozawa
Publikováno v:
ECS Meeting Abstracts. :677-677
A new method is proposed to address the degradation of thermal stability in Ni silicide on heavily doped N-type Si substrates. Layered deposition of Al or B at the Ni/Si interface prior to silicidation was found to improve the thermal stability of Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38dbed7257d650e2c8a3616fe2752aba
https://doi.org/10.1149/ma2008-01/16/677
https://doi.org/10.1149/ma2008-01/16/677
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