Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Yoshihisa Fujisaki"'
Autor:
Yoshihisa Fujisaki, Ichiro Okawa
Publikováno v:
The Proceedings of the Annual Convention of the Japanese Psychological Association. 83:2A-078
Publikováno v:
Thin Solid Films. 583:55-59
Amorphous thin Ge 2 Sb 2 Te 5 films were deposited by MOCVD (metal organic chemical vapor deposition) on three-dimensional structures. Ammonium gas, used as a reactant, reduced the deposition temperature to 150 °C, which is lower than that of metal-
Autor:
Yoshihisa Fujisaki
Publikováno v:
Topics in Applied Physics; 2020, Vol. 122, p195-222, 28p
Autor:
Yoshihisa Fujisaki
Publikováno v:
Topics in Applied Physics ISBN: 9789402408393
Topics in Applied Physics ISBN: 9789811512117
Topics in Applied Physics ISBN: 9789811512117
Ferroelectric field effect transistors (FeFETs) composed of P(VDF-TrFE) (Poly(Vinylidenefluoride-Tirfluoroethylene)) thin films and semiconductor substrates show excellent ferroelectric transistor characteristics. Since P(VDF-TrFE) has the ferroelect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97e74a2a5f8396d3f1e2a199c350b7b4
https://doi.org/10.1007/978-94-024-0841-6_8
https://doi.org/10.1007/978-94-024-0841-6_8
Autor:
Yoshihisa Fujisaki
Publikováno v:
IEICE Electronics Express. 9:908-925
In this article, emerging new semiconductor non-volatile memories are reviewed. We are reaching the integration limit of Flash memories and new types of memories replacing Flash have been actively proposed. Each type of memory is briefly introduced a
Autor:
M. Kinoshita, Kazuo Ono, Motoyasu Terao, Riichiro Takemura, Yoshihisa Fujisaki, Yoshitaka Sasago, Kenzo Kurotsuchi, Norikatsu Takaura
Publikováno v:
ECS Transactions. 16:19-26
A resistive-switching solid-state brain-neocortex-like device for advanced non-volatile logic applications was developed. This device can be used as a reconfigurable logic device that is operated by electrically connecting and disconnecting pairs of
Autor:
Takashi Kobayashi, Yoshitake Hiroshi, Koji Fujisaki, T. Takahashi, Kenzo Kurotsuchi, Akio Shima, Hiroyuki Minemura, Yumiko Anzai, Takashi Takahama, Yoshitaka Sasago, Yoshihisa Fujisaki, Toshiyuki Mine
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
A high-programming-throughput three-dimensional (3D) vertical chain-cell-type phase-change memory (VCCPCM) array for a next-generation storage device was fabricated. To increase the number of write cells at one time by reducing resistance of bit and
Publikováno v:
Integrated Ferroelectrics. 62:171-176
The effects of post-annealing on the properties of Ru films formed by metalorganic chemical vapor deposition were investigated, aiming to the application to the bottom electrode of ferroelectric capacitors. Ruthenium films were deposited at a tempera
Publikováno v:
Integrated Ferroelectrics. 59:1437-1443
Ruthenium films formed by metalorganic chemical vapor deposition were investigated, taking account of the application to the bottom electrode of ferroelectric capacitors. Ruthenium films were deposited using a liquid-type source of Ru[EtCp]2 in a col
Publikováno v:
Integrated Ferroelectrics. 59:1437-1443