Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yoshihiro Ueta"'
Autor:
Noboru Iwata, Takahiro Doe, Keisuke Kitano, Yoshihiro Ueta, Takahiro Adachi, Makoto Izumi, Tetsu Tatsuma, Yasuhiko Arakawa
Publikováno v:
Proceedings of the International Display Workshops. :397
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32f6ad30ffadcf4e0b750a4cbfff8233
https://doi.org/10.36463/idw.2022.0397
https://doi.org/10.36463/idw.2022.0397
Autor:
Mototaka Taneya, Yukio Yamasaki, Shigetoshi Ito, Takayuki Yuasa, Takeshi Kamikawa, Yoshihiro Ueta, Kunihiro Takatani
Publikováno v:
physica status solidi (a). 204:2073-2076
Nitride based violet laser diodes grown on GaN substrates have been investigated. A grooved substrate, having a striped pattern with a pitch of 400 μm, has been prepared and epitaxial growth has been performed. No cracks have been observed in the ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640ff080cb5efe8a507534ae99e677d0
https://doi.org/10.1002/pssa.200674755
https://doi.org/10.1002/pssa.200674755
Autor:
Masaya Ishida, Mototaka Taneya, Yoshihiro Ueta, Shigetoshi Ito, Takayuki Yuasa, Tomoki Ohno, Susumu Omi, Yukio Yamasaki, Toshiyuki Kawakami, Kunihiro Takatani
Publikováno v:
Japanese Journal of Applied Physics. 43:96-99
AlGaInN violet laser diodes grown on GaN substrates have been studied. Waveguide simulations have been performed and perpendicular radiation angles have been investigated. A peculiar layer structure has been proposed to reduce the perpendicular radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::953f42e3908d041af9a07ae89df50e2e
https://doi.org/10.1143/jjap.43.96
https://doi.org/10.1143/jjap.43.96
Autor:
Mototaka Taneya, Takayuki Yuasa, Yoshihiro Ueta, Hirokazu Mouri, Masahiro Araki, Yuhzoh Tsuda
Publikováno v:
physica status solidi (b). 240:404-407
We have investigated the growth of the GaN-rich side of GaNP films by metalorganic chemical vapor deposition (MOCVD). The GaNP samples were mainly analysed by using X-ray diffraction (XRD) and Auger electron spectroscopy (AES). From the XRD measureme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55d03ddd72601e0aa785bf176b4bb9a
https://doi.org/10.1002/pssb.200303297
https://doi.org/10.1002/pssb.200303297
Publikováno v:
Journal of Crystal Growth. 145:203-208
The annealing effects of GaN and GaP in PH 3 and NH 3 , respectively, are investigated, and metalorganic chemical vapor deposition (MOCVD) growth of GaP on GaN and GaN on GaP was performed. The following results are obtained: N atoms are introduced i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5c291265fe748443aa81bc37b93766
https://doi.org/10.1016/0022-0248(94)91051-0
https://doi.org/10.1016/0022-0248(94)91051-0
Publikováno v:
Journal of Electronic Materials. 21:355-359
AlGaAs layers were grown on recessed GaAs substrates by MOVPE at 5 and 100 Torr. The two mechanisms, the gas phase diffusion through the stagnant layer and the surface migration of the growing species, are responsible for the surface step height afte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f7c044ef2286902d3e7205acf5c9ac
https://doi.org/10.1007/bf02660466
https://doi.org/10.1007/bf02660466
Autor:
Yoshihiro Ueta, Tetsuo Soga, Y. Kamiya, Shiro Sakai, Hisao Sato, Masuo Fukui, Masayoshi Umeno
This paper describes the first MOCVD growth of GaN on Si substrate whose surface is covered by crystalline GaAs. Since bulk modulus of GaAs is smaller than those of GaN and Si, more dislocation is expected to be formed in GaAs than in GaN. GaAs on (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9d8c523584319e9629769becafbd803
https://doi.org/10.1016/b978-0-444-81889-8.50088-2
https://doi.org/10.1016/b978-0-444-81889-8.50088-2
Publikováno v:
MRS Proceedings. 339
The acceptor binding energy is calculated to find out the best acceptor impurity in InN, GaN and AlN. Be is predicted to be the shallowest acceptor and the next are Mg and Zn. Group IV elements such as C or Si are very deep. Band lineup is calculated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fafca5909f773a2b7a1ecab99dedc91c
https://doi.org/10.1557/proc-339-459
https://doi.org/10.1557/proc-339-459
Publikováno v:
MRS Proceedings. 228
AlGaAs/GaAs double-heterostructure (DH) optical waveguides on Si substrates which is important in future opto-electric integrated circuits (OEICs) utilizing both Si and GaAs devices is analyzed by the effective index method and fabricated by metalorg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa6c079db7095e2d558248b77fb14f2
https://doi.org/10.1557/proc-228-225
https://doi.org/10.1557/proc-228-225
Publikováno v:
MRS Proceedings. 221
UCGAS (undercut GaAs on Si) structures in which a part of the GaAs layer is separated from the Si substrate are newly developed to reduce both the thermal stress and the defect density. The stress distribution in the fabricated structures is evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39cd44970fd19f2b7c06972ff03f7770
https://doi.org/10.1557/proc-221-429
https://doi.org/10.1557/proc-221-429