Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Yoshihiro Todokoro"'
Publikováno v:
Membranes, Vol 9, Iss 8, p 103 (2019)
Silica-based membranes show both robust properties and high-permeability, offering us great potential for applying them to harsh conditions where conventional organic membranes cannot work. Despite the increasing number of paper and patents of silica
Externí odkaz:
https://doaj.org/article/80f6a3de54934fffb31533d46a36b735
Autor:
Yoshihiro Todokoro, Tomohiro Kubota, Masao Takahashi, Hikaru Kobayashi, Kenji Yoneda, J. Ivanco
Publikováno v:
Surface Science. 529:329-337
Energy distribution of interface states for GaAs-based metal-oxide-semiconductor structure with an ultra-thin silicon oxide layer is obtained from “XPS measurements under bias.” The interface state spectra have peaked-structure at 0.7 and 0.9 eV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a533b16683aac3244772d30e59b3652
https://doi.org/10.1016/s0039-6028(03)00263-2
https://doi.org/10.1016/s0039-6028(03)00263-2
Publikováno v:
Solid State Communications. 113:195-199
The cyanide treatment in which polycrystalline Si is immersed in a KCN solution followed by rinsing in boiling water increases the energy conversion efficiency of 〈ITO/silicon oxide/polycrystalline Si〉 junction solar cells to 12.5%. The XPS measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53af4d9736ea9e7c1d0982d51d5ce5eb
https://doi.org/10.1016/s0038-1098(99)00457-3
https://doi.org/10.1016/s0038-1098(99)00457-3
Publikováno v:
Journal of Applied Physics. 85:2921-2928
Thermal silicon oxide layers formed on the Si substrate can be nitrided at low temperatures ranging between 25 and 700 °C by nitrogen plasma generated by low energy electron impact. The nitrogen concentration is high near the oxide surface, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8879ddb7f674f3f6eae134f87683de0
https://doi.org/10.1063/1.369633
https://doi.org/10.1063/1.369633
Publikováno v:
The Journal of Chemical Physics. 109:4997-5001
The mechanism of platinum (Pt)-enhanced oxidation of Si below 300 °C has been investigated by means of high-resolution x-ray photoelectron spectroscopy. When a Pt layer is deposited on the ∼1-nm-thick silicon oxide-covered Si, low-temperature heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90ce078d34686766790e208e0f28208
https://doi.org/10.1063/1.477112
https://doi.org/10.1063/1.477112
Autor:
Tomohiro Kubota, Shinya Asada, Yoshiyuki Yamashita, Yoshihiro Todokoro, Kenji Yoneda, Akira Asano, Hikaru Kobayashi
Publikováno v:
Journal of Applied Physics. 83:2098-2103
The energy distribution of interface states at ultrathin oxide/Si(100) interfaces is obtained using a new method, i.e., x-ray photoelectron spectroscopy measurements under biases between the metal overlayer and the Si substrate of the metal-oxide-sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bee31672e74031d777e94406c30c985
https://doi.org/10.1063/1.366943
https://doi.org/10.1063/1.366943
Publikováno v:
Journal of Applied Physics. 80:4124-4128
Si‐based metal–oxide–semiconductor structure is formed at temperatures as low as 300 °C using the catalytic activity of the platinum (Pt) layer. X‐ray photoelectron spectroscopy and transmission electron micrography measurements show that he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12da4f45a93d5240aedd3224ca90b967
https://doi.org/10.1063/1.363284
https://doi.org/10.1063/1.363284
Publikováno v:
Journal of The Electrochemical Society. 142:4304-4309
The dielectric breakdown characteristics of thin gate oxide prepared by trans 1,2-dichloroethylene (t-DCE :C 2 H 2 Cl 2 ) added oxidation as a substitution for 1,1,1-trichloroethane (1,1,1-TCA :CH 3 CCl 3 ) have been investigated. The t-DCE was shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb75132a3d8d05202120724b1c28096a
https://doi.org/10.1149/1.2048502
https://doi.org/10.1149/1.2048502
Publikováno v:
Journal of The Electrochemical Society. 142:1619-1625
The influence of medium dose ion implantation on the dielectric breakdown reliability of thin gate oxide is discussed. Medium dose ion implantation and subsequent high temperature oxidation degrade the dielectric breakdown characteristics of metal ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f95b1b6e6affde3dfd7d369569c79b2
https://doi.org/10.1149/1.2048623
https://doi.org/10.1149/1.2048623
Publikováno v:
Journal of The Electrochemical Society. 142:596-600
A wafer level dielectric breakdown reliability measurement technique using logarithmically stepped-up stress current density is proposed, and the effectiveness of this technique is demonstrated. The stepped current time-dependent dielectric breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01fc2d182acc9f0453b6f07c92a33fbd
https://doi.org/10.1149/1.2044106
https://doi.org/10.1149/1.2044106