Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Yoshihiro Shimazu"'
Autor:
Yoshihiro Shimazu, Kazuya Yamada, Hiroki Kobayashi, Rikuto Ishikawa, Haruki Watanabe, Takuro Shinchi, Keisuke Yanai
Publikováno v:
AIP Advances, Vol 13, Iss 8, Pp 085321-085321-5 (2023)
Field-induced superconductivity has been observed on the surfaces of various materials; however, the underlying mechanism of this two-dimensional superconductivity remains elusive. While tunneling spectroscopy measurements provide valuable insights i
Externí odkaz:
https://doaj.org/article/52a649dc80814b21a9221db09c06369b
Autor:
Yoshihiro Shimazu
Publikováno v:
AIP Advances, Vol 13, Iss 3, Pp 035015-035015-7 (2023)
The configuration of an electric double layer transistor (EDLT) allows for a very high surface charge density that cannot be achieved by solid dielectrics. Novel phases and superconductivity have been explored using the EDLT technique. The channel in
Externí odkaz:
https://doaj.org/article/89dc5fc9de9c431089e10dadeff9e571
Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085118-085118-5 (2019)
The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode. The Schottky barrier height exhibits a strong correlation with the work function o
Externí odkaz:
https://doaj.org/article/07a5f138e1cf4a1f824401e4c3f54b95
Autor:
Yoshihiro Shimazu, Shotaro Ono
Publikováno v:
Physics Letters A. 452:128444
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a6c5e280df9ab9550fab1f6df24c823
https://doi.org/10.1016/j.physleta.2022.128444
https://doi.org/10.1016/j.physleta.2022.128444
Publikováno v:
ChemNanoMat. 4:1078-1082
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da6f9b1fa3d1a0a4de4aaf4b9455b0b
https://doi.org/10.1002/cnma.201800304
https://doi.org/10.1002/cnma.201800304
Publikováno v:
Japanese Journal of Applied Physics. 60:111001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8752ffcfc6ac014b6f76460b15127357
https://doi.org/10.35848/1347-4065/ac2a5a
https://doi.org/10.35848/1347-4065/ac2a5a
Publikováno v:
Journal of Applied Physics. 128:114305
We report transport measurements of ionic liquid-gated field-effect transistors with multilayer MoS2 channels. Ambipolar characteristics with high ON/OFF ratios (>105) are observed. The current–voltage characteristics agree well with those calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29aa0e1ae57b22057f3c7d2e47cd6a3
https://doi.org/10.1063/5.0016336
https://doi.org/10.1063/5.0016336
The interface between two-dimensional semiconductors and metal contacts is an important topic of research of nanoelectronic devices based on two-dimensional semiconducting materials such as molybdenum disulfide (MoS2). We report transport properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bccc032f02946428d99f15be68cf890
http://arxiv.org/abs/1712.05628
http://arxiv.org/abs/1712.05628
Publikováno v:
Physics Letters A. 384(3):126073
Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS2), the dc Hall effect measurements have practical difficulties. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7e4cbbeb4ccd5ce1c86e044f2500137
http://hdl.handle.net/10131/00012999
http://hdl.handle.net/10131/00012999
Autor:
Takanori Suzuki, Mariko Miyamori, Masafumi Kudo, Satoru Okawara, Yoshihiro Shimazu, Masatoshi Tanaka, Shinya Ohno
Publikováno v:
Japanese Journal of Applied Physics. 58:032006
Surface second-harmonic generation (SHG) is shown to be observable for carbon nanotube (CNT) films grown by CVD on fused silica. The SHG intensity ratio for incident radiation polarized perpendicular and parallel to the plane of incidence at the fund
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebe265ec4bca6a1c37f0ab68e64ad422
https://doi.org/10.7567/1347-4065/aafe72
https://doi.org/10.7567/1347-4065/aafe72