Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yoshihiro Kida"'
Publikováno v:
2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (EMC/APEMC).
In recent years, it has become essential to use simulation to design noise filters because the development of fast-switching devices has increased the noise in power electronics products. This paper proposes a simulation method for conducted emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae2567e0789130722cc3ae9223b44c6
https://doi.org/10.1109/isemc.2018.8393934
https://doi.org/10.1109/isemc.2018.8393934
Publikováno v:
2016 International Symposium on Electromagnetic Compatibility - EMC EUROPE.
Grounding structure of the shielded cable at the high voltage battery side and that of the power converter chassis have significant influences on common-mode current emitted from a converter such as a DC-DC converter in electric vehicles. In this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e758464b67565f594f02e9457c06345
https://doi.org/10.1109/emceurope.2016.7739235
https://doi.org/10.1109/emceurope.2016.7739235
Autor:
Hideto Miyake, Kazumasa Hiramatsu, Akira Iishiga, Tomohiko Shibata, H. Naoi, Yoshihiro Kida, Mitsuhiro Tanaka
Publikováno v:
physica status solidi (c). :2128-2131
Conductivity control of 1-μm-thick Si-doped Al0.5Ga0.5N using an epitaxial AlN underlying layer wasrealized by introducing CH3SiH3 during low-pressure metalorganic vapor phase epitaxy. Cathodoluminescence measurements indicated that luminescence fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85664322ac2c6077c64df9ee6c66f998
https://doi.org/10.1002/pssc.200303356
https://doi.org/10.1002/pssc.200303356
Autor:
Tomohiko Shibata, Yoshihiro Kida, Kazumasa Hiramatsu, Noriyuki Kuwano, Hideto Miyake, T. Tsuruda
Publikováno v:
physica status solidi (c). :2444-2447
Cross sectional transmission electron microscope (TEM) observation was performed to understand the behavior of threading dislocations (TDs) in an AlxGa1−xN layer epitaxially grown on an AlN/α-sapphire (0001) template. In the AlN template, TDs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a960ab656d6a896b6e3278f1483c37a
https://doi.org/10.1002/pssc.200303517
https://doi.org/10.1002/pssc.200303517
Autor:
Kazutoshi Fukui, Kazuyuki Tadatomo, Hideto Miyake, Youichiro Ohuchi, Yutaka Hamamura, Yasuhiro Shibata, K. Ohta, H. Yasukawa, Yoshihiro Kida, Kazumasa Hiramatsu, Atsushi Motogaito
Publikováno v:
physica status solidi (a). 200:151-154
A high responsivity spectrum in the near ultraviolet (UV) and the vacuum UV (VUV) region was realized using Schottky UV detectors consisting of Al0.5Ga0.5N on an AlN epitaxial layer. The cut-off wavelength of AlGaN UV detectors was 4.7 eV (265 nm), a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c3737964de36f22d77ad2806631eb7
https://doi.org/10.1002/pssa.200303487
https://doi.org/10.1002/pssa.200303487
Publikováno v:
physica status solidi (a). 194:498-501
High-quality AlGaN with high Al content was grown on high-quality epitaxial AlN film on sapphire (0001) by low-pressure metal organic vapour phase epitaxy (LP-MOVPE). The obtained Al x Ga 1-x N (0.2 < x < 0.8) thicker than 0.9 μm had atomically smoo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc7dd06224c8a0922ccf3be5286b6fe
https://doi.org/10.1002/1521-396x(200212)194:2<498::aid-pssa498>3.0.co
https://doi.org/10.1002/1521-396x(200212)194:2<498::aid-pssa498>3.0.co
Autor:
Yoshihiro Kida
Publikováno v:
Journal of JSEE. 53:12-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799e41a45aa6d443d0e1aec3e35d0d99
https://doi.org/10.4307/jsee.53.5_12
https://doi.org/10.4307/jsee.53.5_12
Publikováno v:
Japanese Journal of Applied Physics. 42:L572-L574
The crystalline quality of AlGaN with high AlN molar fraction grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) was improved by using high-quality epitaxial AlN film on sapphire (0001). Atomically flat AlxGa1-xN (0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b44249ffe5caa51f7dac3d8809ceea9
https://doi.org/10.1143/jjap.42.l572
https://doi.org/10.1143/jjap.42.l572
Autor:
Kohji Hasegawa, Akira Takeshita, Sigemasa Hanazawa, Makoto Kobayashi, Toshikazu Yasui, Yoshihiro Kida, Yoshimasa Okamatsu, Takao Suzuki
Publikováno v:
Cytokine. 29(4)
Interleukin-1 (IL-1) plays a crucial role in the immunopathological responses involved with tissue destruction in chronic inflammatory diseases, such as periodontal disease, as it stimulates host cells including fibroblasts to produce various inflamm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a63b3dba26492dcc4bc9a3398ccd72a
https://pubmed.ncbi.nlm.nih.gov/15652448
https://pubmed.ncbi.nlm.nih.gov/15652448
Autor:
Keiichiro Asai, Teruyo Nagai, Yoshihiro Kida, Kazumasa Hiramatsu, Tomohiko Shibata, Osamu Oda, Hideto Miyake, Shigeaki Sumiya, Mitsuhiro Tanaka
Publikováno v:
MRS Proceedings. 693
We demonstrate high-quality epitaxial AlN films on C-plane sapphire as a new buffer layer technique for the growth of high-quality GaN. The obtained GaN films were atomically flat and the full width at half maximum (FWHM) values of the X-ray rocking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6aea1d012a78453d9fdb56f740cf82
https://doi.org/10.1557/proc-693-i3.48.1
https://doi.org/10.1557/proc-693-i3.48.1