Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Yoshihiro Arimoto"'
Autor:
Kaima Suzuki, Hiroki Sato, Hiromi Mori, Ryosuke Matsumoto, Yoshihiro Arimoto, Hiroshi Sato, Tomoya Kamide, Toshiki Ikeda, Yuichiro Kikkawa, Hiroki Kurita
Publikováno v:
Medicina, Vol 58, Iss 9, p 1264 (2022)
Background and Objectives: Nutritional management in patients with subarachnoid hemorrhage (SAH) during the acute phase is important; however, there is no proper evidence or recommendations on the appropriate nutrients for early enteral nutrition. Th
Externí odkaz:
https://doaj.org/article/36b125d269794ded9d458841aa8697ad
Autor:
Satoshi Hasegawa, Hiroshi Ishiwara, Tetsuro Tamura, Kazumi Kato, Hiromasa Hoko, Yoshiaki Tabuchi, Yoshihiro Arimoto
Publikováno v:
Integrated Ferroelectrics. 89:171-179
In this paper, we describe a multi-bit programming technique for a metal-ferroelectric-insulator-semiconductor field-effect-transistor (MFIS-FET) to increase the memory capacity of ferroelectric random access memory (FeRAM). We fabricated a p-channel
Autor:
Hiroshi Ishiwara, Yoshihiro Arimoto
Publikováno v:
MRS Bulletin. 29:823-828
The current status of ferroelectric random-access memory (FeRAM) technology is reviewed in this article. Presented first is the status of conventional FeRAM, in which the memory cells are composed of ferroelectric capacitors to store the data and cel
Autor:
Yoshihito Kawashima, Kazumi Kato, Kouzi Aizawa, Byung-Eun Park, Yoshiaki Tabuchi, Hiroshi Ishiwara, Kazuhiro Takahashi, Yoshihiro Arimoto
Publikováno v:
Integrated Ferroelectrics. 65:125-134
MFIS (metal-ferroelectric-insulator-semiconductor) diodes and transistors having a BNT((Bi, Nd)4Ti3O12)/HfO2/Si (100) structure were fabricated and their data retention characteristics were characterized. HfO2 and BNT thin films were formed by E-B (e
Publikováno v:
Integrated Ferroelectrics. 39:179-187
A simulation model of ferroelectric capacitors which describes both hysteresis loops under arbitrary voltage profile and time dependence of polarization change is developed based on the parallel-el...
Publikováno v:
Integrated Ferroelectrics. 26:103-108
SrBi2Ta2O9 (SBT) thin films were directly deposited on IrO2 electrode using liquid source CVD (LS-CVD) method. Bi deficient region in the SBT films, which existed near the conventional Pt bottom electrode, was successfully eliminated using IrO2 botto
Publikováno v:
IEEE Transactions on Electron Devices. 45:105-109
A quasi-SOI power MOSFET has been fabricated by reversed silicon wafer direct bonding. In this power MOSFET, the buried oxide under the channel and source regions is removed and the channel region is directly connected to the source body contact elec
Autor:
Y. Hiraoka, A. Ito, T. Yachi, Matsumoto Satoshi, Yoshihiro Arimoto, T. Ishiyama, Tatsuo Sakai, I. Yamada
Publikováno v:
IEEE Transactions on Electron Devices. 45:1940-1945
The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. The oxide at the original bottom surface of the bulk power MOSFET of the quasi-SOI power MOSFET formed by reversed silicon wafer direct b
Autor:
Yoshihiro Arimoto
Publikováno v:
SHINKU. 40:594-600
Publikováno v:
Integrated Ferroelectrics. 62:105-107
Fabrication of perovskite ferroelectric thin films by sol-gel technique with addition of silicates has been reported as the silicates enhance the crystallization and prevent the degradation of electric properties by reducing thickness [1]. This techn