Zobrazeno 1 - 10
of 148
pro vyhledávání: '"Yoshihiko Moriyama"'
Publikováno v:
ECS Transactions. 75:373-385
An n +-Ge layer with a carrier density of 7 x 1019 cm-3 (physical dopant concentration = 1 x 1020 cm-3) was successfully grown by choosing an appropriate growth condition with a conventional low-pressure CVD technique. We found that a high activation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27897b8b20a4ac157b5f9b949bc34c86
https://doi.org/10.1149/07508.0373ecst
https://doi.org/10.1149/07508.0373ecst
Autor:
Yu Nofuji, Tomoko Hatayama, Mayumi Nagano, Hisato Nishiuchi, Yoshihiko Moriyama, Shuzo Kumagai
Publikováno v:
Japanese Journal of Physical Fitness and Sports Medicine. 65:315-326
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fcfe1efa685f4ce0d23bbed60824b14
https://doi.org/10.7600/jspfsm.65.315
https://doi.org/10.7600/jspfsm.65.315
Autor:
Yoshiki Kamata, Wipakorn Jevasuwan, Eiko Mieda, Tatsuro Maeda, Yoshihiko Moriyama, Toshifumi Irisawa, E. Kurosawa, Masahiro Koike, Mizuki Ono, Tsutomu Tezuka, Yuuichi Kamimuta, Minoru Oda, Koji Usuda, Yuichi Kurashima, Kiyoe Furuse, Hideki Takagi, Keiji Ikeda
Publikováno v:
ECS Transactions. 64:135-147
Germanium is recognized as new channel material to be introduced in near future CMOS technologies. The advantages are the high hole mobility, the high p-type dopant activation and the low contact resistivity, whereas the smaller band gap results in h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa26106db940cb72f11000eaff0390fe
https://doi.org/10.1149/06411.0135ecst
https://doi.org/10.1149/06411.0135ecst
Autor:
Tsutomu Tezuka, Osamu Nakatsuka, Masashi Kurosawa, Shigeaki Zaima, Yasuhiko Imai, Shinichi Ike, Shigeru Kimura, Yoshihiko Moriyama, Noriyuki Taoka
Publikováno v:
Thin Solid Films. 557:164-168
In this study, we have examined the formation of uniaxially strained Ge microstructures with embedded Ge 1 − x Sn x epitaxial layers and the microscopic local strain structure in Ge and Ge 1 − x Sn x using synchrotron X-ray microdiffraction and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd71707af9fe2d176cc6dc3912e0d109
https://doi.org/10.1016/j.tsf.2013.08.126
https://doi.org/10.1016/j.tsf.2013.08.126
Autor:
Noriyuki Taoka, Masashi Kurosawa, Yasuhiko Imai, Yoshihiko Moriyama, Osamu Nakatsuka, Shinichi Ike, Shigeaki Zaima, Shigeru Kimura, Tsutomu Tezuka
Publikováno v:
ECS Transactions. 58:185-192
In this study, we have examined the local growth of Ge1 − x Sn x heteroepitaxial layers on micrometer-scale-patterned Ge substrates with molecular beam epitaxy method. We have investigated the strain relaxation behavior and microscopic local strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6afdc0ccbcde94d1d8270ab66406b0
https://doi.org/10.1149/05809.0185ecst
https://doi.org/10.1149/05809.0185ecst
Autor:
Minoru Oda, Yuuichi Kamimuta, Tsutomu Tezuka, Toshifumi Irisawa, Yoshihiko Moriyama, Yoshiaki Nakamura, Keiji Ikeda, Akira Sakai
Publikováno v:
Solid-State Electronics. 83:42-45
Fabrication of bonded Germanium on insulator (GeOI) substrates with thin Al 2 O 3 /SiO 2 buried oxide layers was demonstrated for the first time. Thin Al 2 O 3 layers grown by an atomic-layer deposition method, which have hydroxyl groups on their sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a87c4f894713e167354df759c6a9538e
https://doi.org/10.1016/j.sse.2013.01.036
https://doi.org/10.1016/j.sse.2013.01.036
Autor:
Yoshihiko Moriyama, Akira Sakai, Yoshiaki Nakamura, Jun Kikkawa, Shuto Yamasaka, Shotaro Takeuchi, Koji Izunome, Tsutomu Tezuka
Publikováno v:
ECS Transactions. 50:709-725
Wafer bonding is an attractive process to creat new structures and materials, alternative to conventional bulk-Si substrates, in the form of substrates for the advanced metal-oxide-semiconductor field effect transistors (MOSFETs). A germanium on insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::675448ebf92abdcacc947d49b97b701b
https://doi.org/10.1149/05009.0709ecst
https://doi.org/10.1149/05009.0709ecst
Publikováno v:
Thin Solid Films. 520:3236-3239
Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd05d96b3f5859ea09ea0bfff04ab1e
https://doi.org/10.1016/j.tsf.2011.10.085
https://doi.org/10.1016/j.tsf.2011.10.085
Autor:
Takafumi Saito, Shuzo Kumagai, Yoshihiko Moriyama, Eri Matuo, Masahiro Sakita, Takamasa Koga, Mayumi Nagano, Yu Nofuji
Publikováno v:
Japanese Journal of Health Promotion and Physical Therapy. 1:21-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4fb5aa5f3cdb0a77909e267cd58ca5
https://doi.org/10.9759/hppt.1.21
https://doi.org/10.9759/hppt.1.21
Autor:
Yoshihiko Moriyama, Keiji Ikeda, Toshifumi Irisawa, Tsutomu Tezuka, Masahiro Koike, Yuuichi Kamimuta, Minoru Oda, Yoshiki Kamata
Publikováno v:
ECS Transactions. 33:357-366
Firstly, advantages and fabrication processes for strained SiGe fin- and wire-pMOSFETs are summarized. It is shown that strained SiGe-on-insulator channels formed by the Ge condensation process is effective to keep strain in the channel and hence to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0760bdea1ca2ce48422fcb6cd832db18
https://doi.org/10.1149/1.3481624
https://doi.org/10.1149/1.3481624