Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Yoshihiko Miyasaka"'
Autor:
Akira Bandoh, Fukada Keisuke, Hiroshi Osawa, Yoshihiko Miyasaka, Ishibashi Naoto, Kenji Momose
Publikováno v:
Materials Science Forum. 897:83-86
The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (< 4 × 1014 cm-3) 4H-SiC epilayers grown by chemical vapor deposition (CVD) were investigated. The variation in doping concentration during epitaxial growth are cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325bc78beb6b1fbcc4617a5ed82c2e3c
https://doi.org/10.4028/www.scientific.net/msf.897.83
https://doi.org/10.4028/www.scientific.net/msf.897.83
Publikováno v:
Materials Science Forum. :611-614
The step-bunching dependence of the lifetime of metal–oxide–semiconductor capacitors on 4° off-axis 4H-SiC epitaxial wafers was investigated. The effects of the C/Si ratios in epitaxial growth and the substrate properties were examined. Step-bun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ccedeeaed91edf4b9f6bebdb6b4b78
https://doi.org/10.4028/www.scientific.net/msf.778-780.611
https://doi.org/10.4028/www.scientific.net/msf.778-780.611
Autor:
Makoto Kitabatake, Takayuki Sato, Tamotsu Yamashita, Kenji Momose, Hirofumi Matsuhata, Yoshihiko Miyasaka
Publikováno v:
Materials Science Forum. :374-377
The trapezoid-shape defects are one of the most common surface defects on current 4H-SiC epitaxial film surface since they give rise negative impact for MOS-devices. We have investigated structures and origins of the defects. It is discovered that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::173a3beed373e1a727abcc98a94333f2
https://doi.org/10.4028/www.scientific.net/msf.778-780.374
https://doi.org/10.4028/www.scientific.net/msf.778-780.374
Autor:
Hiroshi Osawa, Takahashi Seiichi, Tamotsu Yamashita, Koji Kamei, Takayuki Sato, Kenji Momose, Yoshihiko Miyasaka, Michiya Odawara, Yoshiaki Kageshima
Publikováno v:
Materials Science Forum. :382-385
4H-SiC epitaxial wafers were prepared for the investigation of epitaxial stacking faults (SFs), for the purpose of classification and add to the epitaxial specification by PL-imaging analysis. Black colored SFs detected in PL colored images were focu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ab41813361a5e8233bdebc0b2e4d17d
https://doi.org/10.4028/www.scientific.net/msf.778-780.382
https://doi.org/10.4028/www.scientific.net/msf.778-780.382
Autor:
Kenji Momose, Takayuki Sato, Yoshihiko Miyasaka, Makoto Kitabatake, Michiya Odawara, Tamotsu Yamashita, Hirofumi Matsuhata
Publikováno v:
Materials Science Forum. :585-588
Experimentally,the grazing-incident X-ray topography at different diffraction conditions, and room temperature photo-luminescence spectroscopy, various different types of stacking-faults in epitaxial films on 4-degrees-off 4H-SiC wafers were identifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889d85f0b3a0d76b12ed307e68031b60
https://doi.org/10.4028/www.scientific.net/msf.740-742.585
https://doi.org/10.4028/www.scientific.net/msf.740-742.585
Autor:
Hirofumi Matsuhata, Makoto Kitabatake, Yoshihiko Miyasaka, Takayuki Sato, Kenji Momose, H. Ohshima, M. Sekine, Tamotsu Yamashita
Publikováno v:
Materials Science Forum. :649-652
Triangular shaped defects with obtuse-angles at tops and long bases are often observed in surfaces of epitaxial films. We have investigated the origins of them, and it became clear that these defects without clear origins were formed by contamination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9990b2e1da5b7ddf1272a49f49a2ad17
https://doi.org/10.4028/www.scientific.net/msf.740-742.649
https://doi.org/10.4028/www.scientific.net/msf.740-742.649
Autor:
Daisuke Muto, Takayuki Sato, Makoto Kitabatake, Yoshiki Shimodaira, Kenji Momose, Kuniaki Yamatake, Tamotsu Yamashita, Yoshihiko Miyasaka, Hirofumi Matsuhata
Publikováno v:
Materials Science Forum. :363-366
We report our investigation results on triangular-defects formed on 4deg. off 4H-SiC epi- taxial wafers. Triangular-defects that had neither down-falls nor basal-plane dislocations previously reported as origins of triangular-defects at the tips of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64f92d469c5540af9ce1bb9bbdab0d4
https://doi.org/10.4028/www.scientific.net/msf.717-720.363
https://doi.org/10.4028/www.scientific.net/msf.717-720.363
Publikováno v:
Japanese Journal of Applied Physics. 46:5865-5867
Detailed oscillation spectra and polarization properties have been examined in laser-diode-pumped (LD-pumped) microchip ceramic (i.e., polycrystalline) Nd:YAG lasers and the inherent segregation of lasing patterns into local modes possessing differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2fa0db740a31740e85e980d05bc824
https://doi.org/10.1143/jjap.46.5865
https://doi.org/10.1143/jjap.46.5865
Publikováno v:
Japanese Journal of Applied Physics. 45:L926-L928
Doppler particle sizing by self-mixing laser was demonstrated by using a laser-diode-pumped thin-slice Nd:GdVO4 laser with extreme optical sensitivity. A substantial improvement of optical frequency shifters led to quick and accurate sizing of Browni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e9619a3bfd7278163e5ae43e856da05
https://doi.org/10.1143/jjap.45.l926
https://doi.org/10.1143/jjap.45.l926
Publikováno v:
BUNSEKI KAGAKU. 45:347-351
コンタクト型原子間力顕微鏡(AFM)を用いてポリオレフィンフィルムの表面粗さを測定した.試料は直鎖低密度ポリエチレンと低密度ポリエチレンのブレンド,高密度ポリエチレンと低密度ポ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::818a6b6f3e312ad046bc71e9beb8a6b5
https://doi.org/10.2116/bunsekikagaku.45.347
https://doi.org/10.2116/bunsekikagaku.45.347