Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Yoshihiko Kanzawa"'
Autor:
Osamu Kusumoto, Kazuyuki Sawada, Masahiko Niwayama, Atsushi Ohoka, Nobuyuki Horikawa, Masao Uchida, Kohtaro Tanaka, Yoshihiko Kanzawa, Tetsuzo Ueda
Publikováno v:
Microelectronics Reliability. 58:158-163
Status of the reliability study on silicon carbide (SiC) power MOS transistors is presented. The SiC transistors studied are diode-integrated MOSFETs (DioMOS) in which a highly doped n-type epitaxial channel layer formed underneath the gate oxide act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b41d9fc5b459e461f8a2575d85a0a53
https://doi.org/10.1016/j.microrel.2015.11.033
https://doi.org/10.1016/j.microrel.2015.11.033
Autor:
Atsushi Ohoka, Tetsuzo Ueda, Nobuyuki Horikawa, Tsutomu Kiyosawa, Haruyuki Sorada, Yoshihiko Kanzawa, Kazuyuki Sawada, Masao Uchida, Kouichi Saitou
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Trade-off between threshold voltage and specific on-resistance is successfully overcome in a diode-integrated SiC MOSFET by improving the design of n-type epitaxial channel layer and p-type body region. This new design features enhanced transconducta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a22a9c0a0a63933b61eb91c45cbdcc59
https://doi.org/10.1109/ispsd.2018.8393600
https://doi.org/10.1109/ispsd.2018.8393600
Autor:
Atsushi Ohoka, Kazuyuki Sawada, Tsutomu Kiyosawa, Masao Uchida, Haruyuki Sorada, Nobuyuki Horikawa, Eiji Fujii, Tetsuzo Ueda, Yoshihiko Kanzawa
Publikováno v:
Materials Science Forum. :911-914
Device technologies of SiC MOSFETs have nearly matured to the level of mass production and one of the remaining tasks is to serve better solutions in view of both costs and performances for practical systems. Elimination of external reverse diodes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1adfa2c3443959cf9b8ec25bda0fd035
https://doi.org/10.4028/www.scientific.net/msf.778-780.911
https://doi.org/10.4028/www.scientific.net/msf.778-780.911
Autor:
Nobuyuki Otsuka, Nobuyuki Horikawa, Tetsuro Sawai, Yoshihiko Kanzawa, Kenji Mizutani, Tetsuya Yamamoto, Eiji Fujii
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper presents a novel methodology to design a compact but precise SPICE (Simulation Program with Integrated Circuit Emphasis) model which reproduces complete current-voltage (I-V) characteristics of Silicon Carbide (SiC) power devices. The meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52c45108bd285acfae30b289fc6ad029
https://doi.org/10.1109/sispad.2014.6931561
https://doi.org/10.1109/sispad.2014.6931561
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
We analyzed SiO 2 void volumes formed on samples which failed during TDDB tests by constructing three-dimensional (3D) images in FIB-SEM system. We succeeded in visualizing the breakdown spots within SiO 2 on 4H-SiC substrates and provided clear evid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7958c16bb38baf0280316ec63c320947
https://doi.org/10.1109/irps.2014.6861128
https://doi.org/10.1109/irps.2014.6861128
Autor:
Yoshihiko Kanzawa, Shinji Takeoka, Shinji Hayashi, Keiichi Yamamoto, Minoru Fujii, T. Kageyama
Publikováno v:
Solid State Communications. 102:533-537
Photoluminescence (PL) spectra of Si nanocrystals embedded in SiO 2 films were measured as a function of the size. Samples were prepared by r.f. cosputtering of Si and SiO 2 and post-annealing. The average particle sizes for all the samples were dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ae30d0aa857724aea5c17c0f85248f9
https://doi.org/10.1016/s0038-1098(96)00774-0
https://doi.org/10.1016/s0038-1098(96)00774-0
Publikováno v:
Materials Science and Engineering: A. :155-158
We prepared B-doped Si microcrystals using an r.f. cosputtering method. The samples were investigated by transmission electron microscopy, IR absorption and Raman measurements. The Raman spectra of the samples were found to change depending on the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06ce19fd10fda9660057f0feb165924f
https://doi.org/10.1016/s0921-5093(96)10303-8
https://doi.org/10.1016/s0921-5093(96)10303-8
Publikováno v:
Solid State Communications. 100:227-230
We have succeeded, for the first time, in doping B atoms into Si nanocrystals well dispersed in an oxide matrix. The samples were prepared by cosputtering of Si, SiO2 and B2O3 targets and post-annealing. The growth of Si nanocrystals in the matrix wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3482cbf6e87e601605e48afc792a4c46
https://doi.org/10.1016/0038-1098(96)00408-5
https://doi.org/10.1016/0038-1098(96)00408-5
Publikováno v:
Scopus-Elsevier
ResearcherID
ResearcherID
We have observed Raman scattering from acoustic phonons confined in Si nanocrystals. It was found that the Raman spectra depend strongly on the size of the nanocrystals and the peaks shift to higher frequencies as the size decreases. We also found th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bb920501865ba24f9deec610a1ed98c
https://doi.org/10.1103/physrevb.54.r8373
https://doi.org/10.1103/physrevb.54.r8373
Publikováno v:
Journal of Physics: Condensed Matter. 8:4823-4835
Si-rich films were prepared by a RF cosputtering method and their Raman, infrared absorption and photoluminescence (PL) spectra were measured as functions of Si concentration and annealing temperature. The Raman spectrum was found to change depending
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e59a5ad164ca857b3562c571f464a5a
https://doi.org/10.1088/0953-8984/8/26/014
https://doi.org/10.1088/0953-8984/8/26/014