Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yoshihide Kihara"'
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
Japanese Journal of Applied Physics. 61:SI1015
We demonstrated a coverage-controllable sidewall protective film by controlling the degree of oxidation during plasma-enhanced SiO2 atomic layer deposition (ALD) as a novel technology to suppress bowing in a high-aspect-ratio-contact (HARC) hole etch
Autor:
Shota Yoshimura, Yannick Feurprier, Yoshihide Kihara, Arnaud Dauendorffer, Tetsuya Nishizuka, Noriaki Nagamine, Kenta Ono, Takahiro Shiozawa, Shinya Morikita, Keisuke Yoshida, Kathleen Nafus, Atsutoshi Inokuchi, Satoru Shimura, Kiyoshi Maeda, Ken Kobayashi
Publikováno v:
Advances in Patterning Materials and Processes XXXVIII.
Extreme ultraviolet (EUV) lithography faces major challenges for smaller nodes due to the impact of stochastic and processing failures.1 One of the main challenges for pitch shrink at these nodes is the optimization of the trade-off between break typ
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
We demonstrated a high selective and anisotropic plasma etch of Si3N4 and SiC. The demonstrated process consists of a sequence of ion modification and chemical dry removal steps. The Si3N4 etch with H ion modification showed a high selectivity to SiO
Publikováno v:
Hyomen Kagaku. 38:210-215
Publikováno v:
Advanced Etch Technology for Nanopatterning VIII.
In patterning etch processes, the fabrication of multilayer films requires the precision of atomic scale X-Y CD controllability in complex hole patterns, and reduction of local variability such as Line Edge Roughness (LER), Line Width Roughness (LWR)
Autor:
Takayuki Katsunuma, Tomoyuki Oishi, Akihiro Tsuji, Masahiro Tabata, Ogawa Shuhei, Toru Hisamatsu, Masanobu Honda, Yoshihide Kihara
Publikováno v:
ECS Transactions. 75:3-10
In recent years, the progression of very large scale integration of semiconductor devices and miniaturization require extension of ultra-high selectivity process and CD control technique exhibiting atomic-layer-level control. We introduce herein a st
Publikováno v:
The Astrophysical Journal. 514:524-528
The reaction of H with solid thin films of C2H4 and C2H6 deposited on the silicon substrate at 13 K was studied using the thermal desorption method and Fourier transform-infrared (FT-IR) spectroscopy. In the reaction of H with C2H4, the formation of
Autor:
Kazuyoshi Yamamoto, Kenzo Hiraoka, Akihiro Yamashita, Takashi Miyagoshi, Nagayuki Oohashi, Yoshihide Kihara
Publikováno v:
The Astrophysical Journal. 508:423-430
In the interstellar clouds, a number of oxygen-containing organic compounds such as alcohols and carbonium compounds have been observed. In order to investigate the role of grain processes for the formation and destruction of these compounds, thin fi
Publikováno v:
The Astrophysical Journal. 498:710-715
The reactions of H atoms with C, O, CO, and CH3CN in solid phase at 12 K were investigated by temperature-programmed mass spectrometry. In the reaction of H atoms with C atoms trapped in the CO matrix, H atoms migrate in the CO matrix and react with