Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Yoshiharu Yamauchi"'
Publikováno v:
Diamond and Related Materials. 18:796-799
A dielectric barrier separating hydrogen induced p-type channel and Al gate metal contact of diamond FET has been investigated. The separation barrier is necessary to prevent tunneling current between the H-induced channel and the gate contact. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c6d870ce3bad9e2f2e5b4091afff61
https://doi.org/10.1016/j.diamond.2009.01.020
https://doi.org/10.1016/j.diamond.2009.01.020
Publikováno v:
IEICE Transactions on Electronics. :1042-1049
On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7571d7fc96abac2709cef7b86262369e
https://doi.org/10.1093/ietele/e91-c.7.1042
https://doi.org/10.1093/ietele/e91-c.7.1042
Publikováno v:
Diamond and Related Materials. 17:741-744
Cross-sectional transmission microscopy images of hydrogen-terminated diamond field-effect transistor reveal interfacial layers between the metal and hydrogen-terminated diamond layer. Especially interesting is that an interfacial layer between Al an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192aa2600ccdc985b20df3a206b1eeab
https://doi.org/10.1016/j.diamond.2007.12.022
https://doi.org/10.1016/j.diamond.2007.12.022
Publikováno v:
Diamond and Related Materials. 16:1010-1015
The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain ( f T ) and power gain ( f MAX ) of 45 GHz and 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::332175445232540f318852d061e4ddd9
https://doi.org/10.1016/j.diamond.2006.12.046
https://doi.org/10.1016/j.diamond.2006.12.046
Autor:
Daniel J. Twitchen, Geoffrey Alan Scarsbrook, Toshiki Makimoto, Yoshiharu Yamauchi, S.E. Coe, Kenji Ueda, M. Schwitters, Makoto Kasu
Publikováno v:
Diamond and Related Materials. 15:1954-1957
We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019af32abbaf5c70bb6d1d1f0823a690
https://doi.org/10.1016/j.diamond.2006.07.021
https://doi.org/10.1016/j.diamond.2006.07.021
Autor:
Kenji Ueda, Yoshiharu Yamauchi, Haitao Ye, Makoto Kasu, Toshiki Makimoto, Satoshi Sasaki, N. Maeda
Publikováno v:
Japanese Journal of Applied Physics. 45:3609-3613
Temperature dependent DC and RF characteristics of p-type diamond metal?semiconductor field-effect transistors (MESFETs) on hydrogen-terminated surfaces are investigated. The device is thermally stable up to 100 ?C, because it does not deteriorate at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc6f29261768d5d03a5072ddef91303
https://doi.org/10.1143/jjap.45.3609
https://doi.org/10.1143/jjap.45.3609
Autor:
Haitao Ye, Satoshi Sasaki, N. Maeda, Makoto Kasu, Toshiki Makimoto, Yoshiharu Yamauchi, Kenji Ueda
Publikováno v:
Diamond and Related Materials. 15:787-791
This paper reports the first studies on temperature dependent DC and RF characteristics of diamond metal-semiconductor field-effect transistors along with circular-transmission-line-method measurements on hydrogen-terminated diamond surface. In gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b3b370942476d04b2d0e8c2e1cba7b
https://doi.org/10.1016/j.diamond.2006.01.002
https://doi.org/10.1016/j.diamond.2006.01.002
Publikováno v:
Diamond and Related Materials. 15:783-786
We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900a82c8c53cea77d128910b06359a26
https://doi.org/10.1016/j.diamond.2005.12.025
https://doi.org/10.1016/j.diamond.2005.12.025
Publikováno v:
Japanese Journal of Applied Physics. 42:2300-2304
Structural and optical properties of AlyGa1-x-yInxN with y from 0.17 to 0.66 and x from 0.01 to 0.08 grown on GaN epitaxial layers by metalorganic vapor phase epitaxy are investigated by X-ray diffraction (XRD), room-temperature photoluminescence (RT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02852eaf3108631dde153e1b0e2cc7a2
https://doi.org/10.1143/jjap.42.2300
https://doi.org/10.1143/jjap.42.2300
Autor:
Yoshiharu Yamauchi, Abraham Ulman, Toshio Ogino, Kurikka V.P.M. Shafi, K. Prabhakaran, Kotaro Tsubaki, Yoshikazu Homma
Publikováno v:
Applied Surface Science. 190:161-165
Here, we demonstrate a “plug and play” approach to achieve multi-functionalization of Si. In this approach, externally synthesized functional nanoparticles are introduced onto device quality Si wafers and the surface chemical bonds are manipulate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1e9c80a8aa346ffdcbf2d8384b2953
https://doi.org/10.1016/s0169-4332(01)00880-7
https://doi.org/10.1016/s0169-4332(01)00880-7