Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Yoshiharu Kakehi"'
Publikováno v:
Vacuum. 193:110550
Numerous piezoresistive films have been investigated for high-temperature pressure sensors, yet there have been no reports of piezoresistive films that exhibit all of the desired characteristics. In this study, titanium oxycarbide thin films were dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607d7dd3b9c72fbf5acf208f8d087a46
https://doi.org/10.1016/j.vacuum.2021.110550
https://doi.org/10.1016/j.vacuum.2021.110550
Autor:
Takeshi Tanaka, Yoshiharu Kakehi, Eiji Furuya, Yusuke Kondo, Noriaki Hashimoto, Yoshiharu Yamada, Takashi Mori, Masami Nakagawa
Publikováno v:
Japanese Journal of Applied Physics. 58:068010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575597a7bedb3036562a7e89cf07cd2a
https://doi.org/10.7567/1347-4065/ab241c
https://doi.org/10.7567/1347-4065/ab241c
Autor:
Yusuke Kanaoka, Kazuo Satoh, Yoshiaki Sakurai, Shuichi Murakami, Yoshiharu Kakehi, Yoshiharu Yamada
Publikováno v:
Japanese Journal of Applied Physics. 58:038004
The effect of gate insulator thickness on the properties of ZnO–SnO2 (ZTO) thin film transistors (TFTs) was investigated. The ZTO TFTs with gate insulator thickness ranging from 100 to 400 nm were fabricated in a low temperature process. The drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe6e1fe85a50910d0302e3a27fe471aa
https://doi.org/10.7567/1347-4065/ab01f7
https://doi.org/10.7567/1347-4065/ab01f7
Publikováno v:
Cryogenics. 51:546-549
Chromium nitride (CrN) thin films were fabricated onto Si wafers by RF magnetron sputtering equipment in pure N2 gas. By adjusting the fabrication conditions, the film had negative temperature coefficient of resistance (TCR) below 300 K. It showed re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18299f758f9cb4fb51554964bfd3a41
https://doi.org/10.1016/j.cryogenics.2011.07.005
https://doi.org/10.1016/j.cryogenics.2011.07.005
Autor:
Yusuke Kanaoka, Yoshiaki Sakurai, Kazuo Satoh, Yoshiharu Kakehi, Shuichi Murakami, Yoshiharu Yamada
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:02C105
Herein, the influence of postannealing on the properties of ZnO-SnO2 (ZTO) thin-film transistors (TFTs) was investigated. Postannealing in ambient air induced recovery of the electrical properties of wet-etch-damaged TFTs and a decrease in the subthr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73451bbf61426a17940a9c15137b9550
https://doi.org/10.1116/1.5003283
https://doi.org/10.1116/1.5003283
Publikováno v:
Thin Solid Films. 518:3097-3100
Excess oxygen and 1-at% Mg co-doped CuScO 2 [3R](0001) epitaxial films were prepared on a-plane sapphire substrates by combining two-step deposition and post-annealing techniques. The optical and electrical transport properties of the co-doped epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::828ec478872c73b3677d668ad99ab2d7
https://doi.org/10.1016/j.tsf.2009.07.204
https://doi.org/10.1016/j.tsf.2009.07.204
Publikováno v:
Vacuum. 84:618-621
CuScO 2 thin films with different Mg concentrations were grown on a-plane sapphire substrates by combining the two-step deposition and post-annealing techniques using Cu 2 (Sc 1− x Mg x ) 2 O y [ X = 0.01, 0.05, 0.10] targets. The effects of the Mg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d6ee1a15566342676652207e37b7177
https://doi.org/10.1016/j.vacuum.2009.06.023
https://doi.org/10.1016/j.vacuum.2009.06.023
Autor:
Norifumi Fujimura, Tsutom Yotsuya, Atsushi Ashida, K. Masuko, Kazuo Satoh, Takeshi Yoshimura, Yoshiharu Kakehi
Publikováno v:
Journal of Crystal Growth. 311:1117-1122
A CuScO 2 (0 0 0 1) epitaxial film with a thickness of a few hundred nanometers was successfully grown on an a -plane sapphire substrate by combining the two-step deposition and post-annealing techniques. The film was single-phase with a rhombohedral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da3ca2e3fcddef20cea77f40338cc4d
https://doi.org/10.1016/j.jcrysgro.2008.11.060
https://doi.org/10.1016/j.jcrysgro.2008.11.060
Autor:
Tsutom Yotsuya, Shuichi Murakami, Kousuke Moriwaki, Kazuo Satoh, Akio Okamoto, Yoshiharu Kakehi
Publikováno v:
Thin Solid Films. 516:5814-5817
Aluminum-doped ZnO–SnO2 (ZTO) films were deposited by RF magnetron sputtering using a Zn2SnO4 target at 400 °C under Ar gas pressure of 2.0 Pa. The Al doping was carried out by placing Al sheets on the Zn2SnO4 target and the inclusion of Al was ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e10797da23cdd7b1b75d036c9b323d5e
https://doi.org/10.1016/j.tsf.2007.10.055
https://doi.org/10.1016/j.tsf.2007.10.055
Autor:
Yoshiharu Kakehi, Atsushi Ashida, Takeshi Yoshimura, Tsutom Yotsuya, Kazuo Satoh, Norifumi Fujimura
Publikováno v:
Thin Solid Films. 516:5785-5789
A CuScO 2 (0001) epitaxial film with an oxygen intercalation layer was formed by annealing using oxygen radicals, and the electrical and optical properties of the epitaxial film were investigated. The thickness of the layer was 60 nm from the film su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0541eefc72d402ca288d3d1b2b3d2448
https://doi.org/10.1016/j.tsf.2007.10.038
https://doi.org/10.1016/j.tsf.2007.10.038