Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Yoshiharu Anda"'
Autor:
Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 3, p1-9, 9p, 3 Color Photographs, 2 Diagrams, 9 Graphs
Autor:
Takahiro Yamada, Tsuguyasu Hatsuda, Hong-An Shih, Heiji Watanabe, Tetsuzo Ueda, Tamotsu Hashizume, Takuji Hosoi, Yoshiharu Anda, Mikito Nozaki, Naohiro Tsurumi, Takayoshi Shimura, Satoshi Nakazawa
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
In this paper, high current and high voltage AlGaN/GaN metal-insulator-semiconductor (MIS) heterojunction field-effect transistors (HFETs) on Si are demonstrated. The devices exhibit a drain current of 20 A as well as a breakdown voltage of 730 V, se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa82068b28be2d02d9be8f330401571
https://doi.org/10.1109/iedm.2017.8268455
https://doi.org/10.1109/iedm.2017.8268455
Autor:
Shuichi Nagai, Tsuguyasu Hatsuda, Osamu Tabata, Yasufumi Kawai, Songbek Che, Shingo Enomoto, Noboru Negoro, Yoshiharu Anda
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Fast switching operation of power electronics systems is significantly advantageous for reducing volume of passive components and increasing power density in the systems. Next generation power devices, such as GaN gate-injection transistor (GIT), are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af17c509449b52caecebd07ad0f44488
https://doi.org/10.23919/ispsd.2017.7988876
https://doi.org/10.23919/ispsd.2017.7988876
Autor:
S. Nakazawa, M. Isliida, Mikito Nozaki, Heiji Watanabe, Akitaka Yoshigoe, Kenta Watanabe, Takayoshi Shimura, Takahiro Yamada, Takuji Hosoi, Yoshiharu Anda, Tetsuzo Ueda
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
We have demonstrated hysteresis-free recessed gate AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) by implementing AIGN gate insulator and selective AlGaN regrowth technique. High thermal stability and excellent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adba95c26a75cdfddd34ca6da058cc01
https://doi.org/10.23919/ispsd.2017.7988927
https://doi.org/10.23919/ispsd.2017.7988927
Autor:
Michael W. Wiemer, Daisuke Ueda, Daijiro Inoue, Tohru Nakagawa, Tetsuzo Ueda, Hidekazu Arase, Eiji Fujii, Inoue Kazuo, Tetsuya Asano, Hidetoshi Ishida, Akio Matsushita, Ryutaro Futakuchi, Akihiro Itou, Yoshiharu Anda, Masaki Yamamoto, Nobuhiko Hayashi, Onur Fidaner
Publikováno v:
IEEE Journal of Photovoltaics. 4:709-712
We propose a novel concept of thin and compact CPV modules in which submillimeter solar cells are directly attached to lens arrays without secondary optics or an extra heat sink. With this small cell size, the optical path length of the module can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27bd045cd5f0755de391b6caac8c86f8
https://doi.org/10.1109/jphotov.2013.2292364
https://doi.org/10.1109/jphotov.2013.2292364
Autor:
Yoshiharu Anda, Tsunenobu Kimoto, Hong-An Shih, Naohiro Tsurumi, Tsuguyasu Hatsuda, Tetsuzo Ueda, Tamotsu Hashizume, Satoshi Nakazawa
Publikováno v:
Japanese Journal of Applied Physics. 58:030902
In this paper, we investigated the effects of the post-deposition annealing (PDA) on the threshold voltage (V th) of AlGaN/GaN MOS heterojunction field-effect transistors with atomic-layer-deposited Al2O3 using H2O vapor or oxygen plasma as the oxida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf9768977b2b718837453bc1031e9eb
https://doi.org/10.7567/1347-4065/aafd17
https://doi.org/10.7567/1347-4065/aafd17
Publikováno v:
IEEE Transactions on Electron Devices. 60:771-775
Ion implantation technique can be applied for planar isolation of AlGaN/GaN heterojunction field-effect transistors (HFETs), which enables high-density integration of the power switching transistors. So far, the reported isolation using ion implantat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb5bffd3bd864d15ad862020992cede
https://doi.org/10.1109/ted.2012.2230264
https://doi.org/10.1109/ted.2012.2230264
Autor:
Masayuki Kuroda, Yoshiharu Anda, Noboru Negoro, Hiroyuki Sakai, Masaaki Nishijima, Tetsuzo Ueda, Tomohiro Murata, Tsuyoshi Tanaka
Publikováno v:
IEICE Transactions on Electronics. :1327-1331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29abcf474d607edd251ebe6073c997b6
https://doi.org/10.1587/transele.e95.c.1327
https://doi.org/10.1587/transele.e95.c.1327
Autor:
Takahiro Yamada, Satoshi Nakazawa, Tetsuzo Ueda, Akitaka Yoshigoe, Hong-An Shih, Takayoshi Shimura, Yoshiharu Anda, Takuji Hosoi, Mikito Nozaki, Heiji Watanabe, Kenta Watanabe
Publikováno v:
Japanese Journal of Applied Physics. 57:06KA07
The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d64e1601b3e69d8084ee5c0311de9ad6
https://doi.org/10.7567/jjap.57.06ka07
https://doi.org/10.7567/jjap.57.06ka07
Autor:
Akitaka Yoshigoe, Takahiro Yamada, Kenta Watanabe, Takuji Hosoi, Masahiro Ishida, Takayoshi Shimura, Heiji Watanabe, Daiki Terashima, Mikito Nozaki, Tetsuzo Ueda, Yoshiharu Anda, Satoshi Nakazawa
Publikováno v:
Japanese Journal of Applied Physics. 57:06KA03
Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad99065d8471446d4f4720b93e68dad6
https://doi.org/10.7567/jjap.57.06ka03
https://doi.org/10.7567/jjap.57.06ka03