Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yoshifumi Yoshioka"'
Autor:
Masataka Umeno, Takayoshi Shimura, Satoshi Kamei, Hiroyuki Hayashi, Yoshifumi Yoshioka, Tetsuya Ikuta
Publikováno v:
Japanese Journal of Applied Physics. 41:2262-2265
Ellipsometric measurements were applied to investigate Ge heteroepitaxial growth by molecular beam epitaxy on a Si(111) substrate, and the changes of optical constants and film thickness were monitored. Reflection high-energy electron diffraction (RH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6680c88efbca19ca6004f5e46568d621
https://doi.org/10.1143/jjap.41.2262
https://doi.org/10.1143/jjap.41.2262
Publikováno v:
Journal of Photopolymer Science and Technology. 10:221-224
We have developed a 473nm blue light generation source by frequency doubling using a KNbO3 for intracavity second harmonic generation of a laser diode pumped Nd:YAG 946nm laser which is combined with an auto power control system and a temperature con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80470eec3c87ca6def4bbb99158274b2
https://doi.org/10.2494/photopolymer.10.221
https://doi.org/10.2494/photopolymer.10.221
Autor:
Tetsuya Ikuta, Toshiya Taji, Masataka Umeno, Kouzou Mizobata, Yoshifumi Yoshioka, Takayoshi Shimura
Publikováno v:
Japanese Journal of Applied Physics. 40:371
Ellipsometric measurements were applied to investigate Si homoepitaxial growth by molecular-beam epitaxy on a Si(111) substrate, and the changes in film thickness and optical parameters were monitored. The reflection high-energy electron diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aafdd55e299c7acab683990a06acad0c
https://doi.org/10.1143/jjap.40.371
https://doi.org/10.1143/jjap.40.371
Publikováno v:
Japanese Journal of Applied Physics. 36:L831
We have observed ellipsometric oscillations when depositing SiO x film on Si(100) substrate using an electron beam deposition method. A period of these oscillations is calculated to be 5.3 Å thick. From an investigation using a rough surface model i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4352b26d48d48077d573467580b0d53
https://doi.org/10.1143/jjap.36.l831
https://doi.org/10.1143/jjap.36.l831
Publikováno v:
Japanese Journal of Applied Physics. 35:4595
We obtained ellipsometric data during the growth of (Al X Ga1- X )0.52In0.48P thin films in real time. We have developed a rotating-analyzer ellipsometer and applied it to an MBE system. It is confirmed that ellipsometry is a good system for monitori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed255f0f01c23353b7cf625de0f19438
https://doi.org/10.1143/jjap.35.4595
https://doi.org/10.1143/jjap.35.4595
Publikováno v:
Journal of the Ceramic Association, Japan. 87:395-399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc628d0e0c70eff7f09e35836f18d64a
https://doi.org/10.2109/jcersj1950.87.1008_395
https://doi.org/10.2109/jcersj1950.87.1008_395
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