Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yoshida Itaru"'
Autor:
Liang, Ted, Kim, Seong-Sue, Ichikawa, Kenjiro, Yoshida, Itaru, Matsui, Kazuaki, Kojima, Yosuke, Nagatomo, Tatsuya, Yamana, Mitsuharu
Publikováno v:
Proceedings of SPIE; November 2023, Vol. 12751 Issue: 1 p127511H-127511H-7, 1147607p
Autor:
Yutaka Kodera, Karen D. Badger, Takeshi Isogawa, Jed H. Rankin, Shinji Akima, Masayuki Kagawa, Anka Birnstein, Jan Heumann, Yusuke Toda, Yoshida Itaru, Masashi Yonetani
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Based on the record for reasonable throughput, 19x nm wavelength inspection is one of the strongest candidates available today for the initial EUV (Extreme Ultraviolet) mask inspection approach until high-throughput E-Beam or actinic inspection is re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::777b10635a9e310f564cd9e50649a55e
https://doi.org/10.1117/12.2537430
https://doi.org/10.1117/12.2537430
Autor:
Ichikawa, Kenjiro, Yoshida, Itaru, Matsui, Kazuaki, Kojima, Yosuke, Nagatomo, Tatsuya, Yamana, Mitsuharu
Publikováno v:
Proceedings of SPIE; 12/20/2023, Vol. 12751, p127511H-127511H-7, 1p
Autor:
Toshio Konishi, Shingo Maruyama, Norihito Fukugami, Yoshida Itaru, Genta Watanabe, Toru Komizo, Takashi Haraguchi, Yutaka Kodera, Shin Ito, Jun Kotani
Publikováno v:
SPIE Proceedings.
EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b19acc3697a8aeca88aa4f247f048d
https://doi.org/10.1117/12.2242624
https://doi.org/10.1117/12.2242624
Autor:
Shingo Maruyama, Toshio Konishi, Shin Ito, Yutaka Kodera, Norihito Fukugami, Yoshida Itaru, Genta Watanabe, Toru Komizo, Jun Kotani, Takashi Haraguchi
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area around the die o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed70ac9a2802481697d150ef5bbb8d6
https://doi.org/10.1117/12.2218942
https://doi.org/10.1117/12.2218942
Autor:
Ando, Akihiko, Yonetani, Masashi, Badger, Karen, Rankin, Jed, Akima, Shinji, Toda, Yusuke, Yoshida, Itaru, Kagawa, Masayuki, Isogawa, Takeshi, Kodera, Yutaka, Heumann, Jan, Birnstein, Anka
Publikováno v:
Proceedings of SPIE; June 2019, Vol. 11178 Issue: 1 p111780D-111780D-7, 1006028p
Autor:
Yoshioka, Nobuyuki, Ito, Shin, Kodera, Yutaka, Fukugami, Norihito, Komizo, Toru, Maruyama, Shingo, Watanabe, Genta, Yoshida, Itaru, Kotani, Jun, Konishi, Toshio, Haraguchi, Takashi
Publikováno v:
Proceedings of SPIE; May 2016, Vol. 9984 Issue: 1 p99840O-99840O-10, 9884171p
Publikováno v:
Acta Neuropathologica; 1978, Vol. 42 Issue 1, p67-70, 4p
Publikováno v:
Archives of Internal Medicine; January 1978, Vol. 138 Issue: 1 p105-111, 7p
Autor:
Panning, Eric M., Goldberg, Kenneth A., Kodera, Yutaka, Fukugami, Norihito, Komizo, Toru, Watanabe, Genta, Ito, Shin, Yoshida, Itaru, Maruyama, Shingo, Kotani, Jun, Konishi, Toshio, Haraguchi, Takashi
Publikováno v:
Proceedings of SPIE; March 2016, Vol. 9776 Issue: 1 p977615-977615-10