Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yoshida, Masaji"'
Autor:
Sugimoto, Tsunemi, Yoshida, Masaji, Yuhya, Sigenori, Baar, David J., Shiohara, Yuh, Tanaka, Shouji
Publikováno v:
Journal of Applied Physics; 8/1/1991, Vol. 70 Issue 3, p1600, 6p, 2 Black and White Photographs, 8 Graphs
Publikováno v:
Journal of Applied Physics; 11/1/1988, Vol. 64 Issue 9, p4692, 4p, 5 Graphs
Autor:
Lesaicherre, Pierre-Yves, Yamamichi, Shintaro, Takemura, Koichi, Yamaguchi, Hiromu, Tokashiki, Ken, Miyasaka, Yoichi, Yoshida, Masaji, Ono, Haruhiko
Publikováno v:
Integrated Ferroelectrics; Nov1995, Vol. 11 Issue 1-4, p81-100, 20p
Autor:
Lesaicherre, Pierre-Yves, Yamaguchi, Hiromu, Miyasaka, Yoichi, Watanabe, Hirohito, Ono, Haruhiko, Yoshida, Masaji
Publikováno v:
Integrated Ferroelectrics; Mar1995, Vol. 8 Issue 1/2, p201-225, 25p
Publikováno v:
Journal of Applied Physics. 64:4692-4695
Heavily Si‐doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low‐te
Autor:
Yoshida, Masaji
Publikováno v:
一橋論叢. 5(1):11-18
論文タイプ||論説
Autor:
Lesaicherre, Pierre-Yves, Yamaguchi, Hiromu, Miyasaka, Yoichi, Watanabe, Hirohito, Ono, Haruhiko, Yoshida, Masaji
Publikováno v:
Integrated Ferroelectrics; March 1995, Vol. 8 Issue: 1 p201-225, 25p
Autor:
Lesaicherre, Pierre-Yves, Yamamichi, Shintaro, Takemura, Koichi, Yamaguchi, Hiromu, Tokashiki, Ken, Miyasaka, Yoichi, Yoshida, Masaji, Ono, Haruhiko
Publikováno v:
Integrated Ferroelectrics; November 1995, Vol. 11 Issue: 1 p81-100, 20p
Publikováno v:
Applied Physics Letters; 1/4/88, Vol. 52 Issue 1, p27, 3p
Publikováno v:
Applied Physics Letters; 3/11/1991, Vol. 58 Issue 10, p1103, 3p, 1 Black and White Photograph, 2 Graphs