Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Yoshiaki Sonobe"'
Autor:
Simon John Greaves, Yoshiaki Sonobe
Publikováno v:
AIP Advances, Vol 13, Iss 2, Pp 025214-025214-5 (2023)
Magnetic nanowires can be used to store information. There are various ways to write magnetic domains in nanowires, usually involving the use of an Oersted field. In this work the use of a spin torque oscillator to write domains in magnetic nanowires
Externí odkaz:
https://doaj.org/article/1ca05c601c974c4bb71964f360df1606
Autor:
Mingling Sun, Takahide Kubota, Shigeki Takahashi, Yoshiaki Kawato, Yoshiaki Sonobe, Koki Takanashi
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055902-055902-5 (2018)
Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS
Externí odkaz:
https://doaj.org/article/80416f5b9abc48529050b509c0d1967e
Autor:
Keisuke Masuda, Hiroyoshi Itoh, Yoshiaki Sonobe, Hiroaki Sukegawa, Seiji Mitani, Yoshio Miura
Publikováno v:
Physical Review B. 106
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation
Autor:
Yuta, Sasaki, Ryoya, Hiramatsu, Yohei, Kota, Takahide, Kubota, Yoshiaki, Sonobe, Akimasa, Sakuma, Koki, Takanashi, Shinya, Kasai, Yukiko K, Takahashi
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(20)
A ferromagnetic metal nanolayer with a large perpendicular magnetic anisotropy, small saturation magnetization, and small magnetic damping constant is a crucial requirement for high-speed spintronic devices. Fabrication of these devices on Si/SiO
Autor:
Syuta Honda, Yoshiaki Sonobe
Publikováno v:
Journal of Physics D: Applied Physics. 55:395001
Long vertical pillars, with a width of the order of nanometers and with perpendicular shape anisotropy (PSA), have high thermal stability. The advantage of using longer pillars is that they can increase the memory areal density while maintaining robu
Autor:
Yoshiaki Sonobe, Hiroyoshi Itoh, Seiji Mitani, Yoshio Miura, Hiroaki Sukegawa, Keisuke Masuda
Publikováno v:
Physical Review B. 103
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriente
Autor:
Satoshi Iwata, Daiki Oshima, Yoshiaki Kawato, Takumi Kimura, Takeshi Kato, Yoshiaki Sonobe, X. Dong, W. Zhao
Publikováno v:
IEEE Transactions on Magnetics. 54:1-5
Introduction Spin transfer torque (STT) switching is considered as a promising writing scheme to realize a Gbit-class magnetic random access memory (MRAM). To create a high density MRAM with more than 10 Gbit capacity, further improvements of the mem
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
Composite media grains consisting of two discrete magnetic layers with different uniaxial anisotropies, $K_{u}$ , and Curie temperatures, $T_{c}$ , were investigated for heat assisted magnetic recording. The maximum switching probability of optimized
Autor:
Koki Takanashi, Yoshiaki Kawato, Mingling Sun, Takahide Kubota, Yoshiaki Sonobe, Arata Tsukamoto, Shigeki Takahashi
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
Buffer-layer dependences of dead-layer thickness, saturation magnetization ( $M_{\mathrm {s}})$ , and interface magnetic anisotropy ( $K_{\mathrm {s}})$ were systematically investigated for Co2Fe0.4Mn0.6Si (CFMS) Heusler alloy ultrathin films with Pd
Publikováno v:
Journal of Physics D: Applied Physics. 54:135002
Domain-wall motion type magnetic memories are expected to be among the next generation of magnetic recording devices and vertical-NAND memories. In particular, three-dimensional race track memory (3D-RM), which extends vertically from a substrate is