Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Yoshiaki Kamigaki"'
Publikováno v:
ECS Transactions. 108:85-92
SiN film has been one of essential materials for electronic devices for its high dielectric properties as well as both chemical and thermal stabilities. However, it is found that SiN film made by LPCVD(Low Pressure Chemical Vapor Deposition) in certa
Publikováno v:
ECS Meeting Abstracts. :1250-1250
Silicon Nitride (SiN) film has been used as insulating material in many electronic devices such as capacitors and memories . In this report, the effect of N2 anneal temperature on charge break down (Qbd) of LP-CVD SiN film was electrically evaluated
Autor:
Kohsei Takahashi, Takashi Takeda, Naoto Hirosaki, Yoriko Suda, Yoshiaki Kamigaki, Hayato Miyagawa
Publikováno v:
Journal of Physics D: Applied Physics. 54:065102
Si6−z Al z O z N8−z (β-SiAlON):Eu2+ is known as a high brightness green phosphor. When β-SiAlON:Eu2+ is excited with UV light (approximately 265 nm), a curved decay afterglow is observed as a result of the trap levels created by the defects in
Autor:
Yoshiaki Kamigaki, Takashi Takeda, Hayato Miyagawa, Naoto Hirosaki, Yoriko Suda, Kohsei Takahashi
Publikováno v:
Journal of Physics D: Applied Physics. 53:165108
Si6−z Al z O z N8−z (β-SiAlON):Eu2+ is among the most suitable green phosphors for white LEDs. To further improve the performance of this phosphor, it is important to investigate the properties of the nitride host crystal, β-SiAlON, which is co
Publikováno v:
Journal of Applied Physics. 123:161542
In red phosphor CaAlSiN3:Eu2+, unintentional blue emission occurs with increasing intensity at low Eu2+ concentrations and also at low measurement temperatures. Time-resolved photoluminescence measurements were used to confirm the decrease in red emi
Autor:
Kenji Tanbara, Yoshiaki Kamigaki
Publikováno v:
ECS Transactions. 16:163-173
We have studied in detail the paramagnetic defect generated in the porous low-k SiOCH films, which is called as Tb center with the oxygen-carbon mixed back bonds. We baked the SiOCH films in vacuum at the temperature from 600oC to 1000oC, which could
Publikováno v:
Japanese Journal of Applied Physics. 46:5762-5766
Electrical characteristics and an origin of traps in silicon nitride film were investigated using discharge current transient spectroscopy (DCTS), electron spin resonance (ESR), and photoluminescence (PL). It was found from DCTS that the density of t
Publikováno v:
Journal of Applied Physics. 92:2475-2478
The interfacial structure of nitrous-oxide- (NO-)nitrided SiO2/Si is determined on the basis of the configuration of the Pb centers and the results of physical analysis. We used electron spin-resonance analysis to observe a decrease in the number of
Autor:
Hiroshi Kotaki, Akihide Shibata, Masayuki Nakano, Yoshiaki Kamigaki, Sugimoto Kazuo, Tetsu Negishi, Takeshi Shiomi, Noriaki Shinohara, Tetsuya Okumine, Fumiyoshi Yoshioka, Atsushi Toki
Publikováno v:
Japanese Journal of Applied Physics. 47:2684-2686
We have proposed a novel oxide–nitride–oxide (ONO)-sidewall 2-bit/cell nonvolatile memory and fabricated 70-nm-node nonvolatile memory devices. For low-pressure chemical-vapor-deposition (LPCVD)-SiN films, with increasing SiH4/NH3 mixture gas rat
Autor:
Manabu Kato, Katsumi Yoneda, Tomoyuki Hamada, Seiichi Kondo, Jiro Ushio, Takahisa Ohno, Nobuyoshi Kobayashi, Shin-ichi Nakao, Yoshiaki Kamigaki
Publikováno v:
Japanese Journal of Applied Physics. 46:3351-3353
On the basis of electron spin resonance (ESR) measurements, we observed a unique paramagnetic center (Tb center, g=2.003) in porous low-dielectric-constant (low-k) carbon-doped silicon oxide (SiOCH) film after annealing the film in vacuum. Fourier tr