Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yosef Badali"'
Publikováno v:
International Journal of Numerical Methods for Heat & Fluid Flow. 33:2100-2127
Purpose Heat exchangers (HEs) which provide heat transfer and transfer energy through direct or indirect contact between fluids have an essential role in many processes as a part of various industries from pharmaceutical production to electronic devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e05ef0ec6012de3bbc2176ecb1d7d6
https://doi.org/10.1108/hff-10-2022-0588
https://doi.org/10.1108/hff-10-2022-0588
In this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/ω) measurements in wide voltage and frequency ranges (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8353a37a73c2905cd83c79df3e7f5e78
https://avesis.gazi.edu.tr/publication/details/7dc5e804-df34-4d2f-95e6-aaf60d5a4207/oai
https://avesis.gazi.edu.tr/publication/details/7dc5e804-df34-4d2f-95e6-aaf60d5a4207/oai
Autor:
Hasan Elamen, Yosef Badali, Murat Ulusoy, Yashar Azizian-Kalandaragh, Şemsettin Altındal, Muhammet Tahir Güneşer
Publikováno v:
Polymer Bulletin.
The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::790de1e9bc1b8abe091d13a3fab03a04
https://doi.org/10.1007/s00289-023-04725-5
https://doi.org/10.1007/s00289-023-04725-5
Autor:
Murat Ulusoy, Yosef Badali, Gholamreza Pirgholi-Givi, Yashar Azizian-Kalandaragh, Şemsettin Altındal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5fa1fd28f2f8914453094f94e22056b
https://avesis.gazi.edu.tr/publication/details/44c6136d-e4b3-4101-8106-f131ba2670bf/oai
https://avesis.gazi.edu.tr/publication/details/44c6136d-e4b3-4101-8106-f131ba2670bf/oai
Publikováno v:
IEEE Sensors Journal
Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb7c3f11eb4c29e36951a21338201b40
https://hdl.handle.net/11693/111906
https://hdl.handle.net/11693/111906
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:18640-18648
The possible current-conduction mechanism (CCMs) of the Au/CoSO4-PVP/n-Si junctions was investigated using temperature-dependence current-voltage (I-V) experiments over 100-360 K. The experimental results showed that the value of BH increases approxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1884b603ab9e62b4fc6e6d891fc9e8e1
https://doi.org/10.1007/s10854-020-04406-3
https://doi.org/10.1007/s10854-020-04406-3
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e6e959cd34ab8286a44f991b5ce62b8
https://doi.org/10.2139/ssrn.4196998
https://doi.org/10.2139/ssrn.4196998
The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a significant issue with more advantageous than the on-chip sensor. The sensitivity (S) and the current conduction mechanisms (CCMs) of the vertical cadmium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eccbe79fda42ca250665b7b14399f3e4
http://hdl.handle.net/11467/6140
http://hdl.handle.net/11467/6140
Autor:
Yashar Azizian-Kalandaragh, Yosef Badali, Mir-Ahmad Jamshidi-Ghozlu, Ferhat Hanife, Süleyman Özçelik, Şemsettin Altındal, Gholamreza Pirgholi-Givi
Publikováno v:
Physica B: Condensed Matter. 650:414495
© 2022In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance-voltage (G/ω-V) experiments at 1 MHz. The results indicate that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a92ce532c85c33d1f882602538d35702
https://doi.org/10.1016/j.physb.2022.414495
https://doi.org/10.1016/j.physb.2022.414495
Publikováno v:
Journal of Physics and Chemistry of Solids
Amorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdee554ed111b90d53381d8b5b1de27b
https://doi.org/10.1016/j.jpcs.2022.110976
https://doi.org/10.1016/j.jpcs.2022.110976