Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Yos Prabowo"'
Publikováno v:
IEEE Transactions on Industry Applications. :1-14
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Autor:
Yos Prabowo, Shrivatsal Sharma, Subhashish Bhattacharya, Awneesh K. Tripathi, Vijay Bhavaraju
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Autor:
Subhashish Bhattacharya, Yos Prabowo, Sayan Acharya, Satish Rengarajan, Ritwik Chattopadhyay, Anup Anurag
Publikováno v:
IEEJ Transactions on Electrical and Electronic Engineering. 16:127-138
Publikováno v:
IEEE Transactions on Power Electronics. 34:5256-5267
Medium-voltage (MV) silicon carbide (SiC) devices have opened up new areas of applications which were previously dominated by silicon-based IGBTs. From the perspective of a power converter design, the development of MV SiC devices eliminates the need
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
Capacitor charging power supplies (CCPS) are used for pulsed-power applications such as electromagnetic guns, radar applications, and pulsed lasers for aesthetic medicine, among many other application fields. This paper describes the design and analy
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
Partially rated power electronic modules (PEMs) can be interfaced with conventional line-frequency transformers (LFTs) to realize hybrid transformers (HTs). Hybrid transformers possess higher controllability as compared to conventional LFTs. In this
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
A hybrid transformer (HT) is implemented by augmenting the traditional low frequency transformer with a partially rated power electronic (PE) module. This paper presents a control methodology that enables the hybrid transformer to perform harmonic is
Publikováno v:
The Transactions of the Korean Institute of Power Electronics. 21:373-380