Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yorito Kakiuchi"'
Autor:
Marina Yamaguchi, Yasunobu Saito, Tomohiro Nitta, Ichiro Omura, Yorito Kakiuchi, Wataru Saito, Kunio Tsuda
Publikováno v:
IEEE Transactions on Electron Devices. 54:1825-1830
The dynamic on-resistance increase associated with the current collapse phenomena in high-voltage GaN high-electron-mobility transistors (HEMTs) has been suppressed by employing an optimized field-plate (FP) structure. The fabricated GaN-HEMTs of 600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a593a73777f748cd54ab70121c3e904
https://doi.org/10.1109/ted.2007.901150
https://doi.org/10.1109/ted.2007.901150
Autor:
Hidetoshi Fujimoto, Yasunobu Saito, Tomohiro Nitta, Takao Noda, Wataru Saito, Masakazu Yamaguchi, Akira Yoshioka, Tetsuya Ohno, Yorito Kakiuchi
Publikováno v:
IEEE Electron Device Letters. 31:659-661
Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The on -resistance increase caused by current collapse phenomena is dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6853ffeed963b2b8587743a335dcc04b
https://doi.org/10.1109/led.2010.2048741
https://doi.org/10.1109/led.2010.2048741
Autor:
Kunio Tsuda, Yasunobu Saito, Ichiro Omura, Yorito Kakiuchi, Marina Yamaguchi, Tomohiro Nitta, Wataru Saito
Publikováno v:
IEEE Electron Device Letters. 29:8-10
A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fadf57925e9ff9a4fefaca24a2c017
https://doi.org/10.1109/led.2007.910796
https://doi.org/10.1109/led.2007.910796
Autor:
Marina Yamaguchi, Ichiro Omura, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Kunio Tsuda, Wataru Saito
Publikováno v:
IEEE Electron Device Letters. 28:676-678
The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e03ae963199c81c7c81ef616f41c22d
https://doi.org/10.1109/led.2007.901665
https://doi.org/10.1109/led.2007.901665
Autor:
Kunio Tsuda, Ichiro Omura, Yorito Kakiuchi, Wataru Saito, Marina Yamaguchi, Tomokazu Domon, Tomohiro Nitta
Publikováno v:
2008 IEEE Power Electronics Specialists Conference.
This paper reports the demonstration of the resonant inverter circuit for electrodeless fluorescent lamps using a high-voltage GaN-HEMT as a main switching device. A 620-V/1.4-A GaN-HEMT was designed and fabricated for power electronic applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261b431e9e7549dccae398f2d64c2a7d
https://doi.org/10.1109/pesc.2008.4592468
https://doi.org/10.1109/pesc.2008.4592468
Autor:
Misao Yoshimura, Yoshikazu Tanabe, Kazuya Nishihori, Masakatsu Mihara, Yoshiaki Kitaura, Tomohiro Nitta, Yorito Kakiuchi, Naotaka Uchitomi
Publikováno v:
Japanese Journal of Applied Physics. 37:3200
In this paper we report on a self-aligned gate buried-channel Al0.22Ga0.78As/GaAs heterostructure field-effect transistor (BC-HFET). The BC-HFET comprises a selectively ion-implanted channel and an undoped i-AlGaAs surface layer. In order to realize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5730001443202cccbaf9afb57a17bc
https://doi.org/10.1143/jjap.37.3200
https://doi.org/10.1143/jjap.37.3200
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.