Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yoonseo Jang"'
Publikováno v:
Journal of Alloys and Compounds. 922:166197
Publikováno v:
Applied Surface Science. 600:154103
Autor:
Jae-Hyun Ryou, Eric S. Larsen, Hyun-Seop Kim, Seung Min Lee, Jungwoo Oh, Weijie Wang, Jung Hwan Yum, Jongho Jung, Christopher W. Bielawski, Ho-Young Cha, Yoonseo Jang
Publikováno v:
Applied Surface Science. 469:634-640
For the first time, an epitaxial beryllium oxide (BeO) film was grown on 4H silicon carbide (4H-SiC) by atomic layer deposition (ALD) at a low temperature of 250 °C. The BeO film had a large lattice mismatch with the substrate (>7–8%), but it was
Autor:
Jungwoo Oh, Christopher W. Bielawski, Yoonseo Jang, Prakash R. Sultane, Dohwan Jung, Eric S. Larsen
Publikováno v:
Applied Surface Science. 572:151405
Beryllium oxide (BeO) is a unique metal oxide that exhibits high thermal conductivity and a high dielectric constant, even though it has a large bandgap energy. These characteristics can potentially address the electromagnetic issues associated with
Autor:
Do Hwan Jung, Christopher W. Bielawski, Yoonseo Jang, Seonno Yoon, Jungwoo Oh, Jung Hwan Yum, Eric S. Larsen, Seung Min Lee
Publikováno v:
Applied Surface Science. 505:144107
In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN inter
Autor:
Seung Min Lee, Jungwoo Oh, Christopher W. Bielawski, Yoonseo Jang, Eric S. Larsen, Jung Hwan Yum, Do Hwan Jung
Publikováno v:
Solid-State Electronics. 163:107661
Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectr
Autor:
Jungwoo Oh, Woo Chul Lee, Christopher W. Bielawski, Yoonseo Jang, Seong Keun Kim, Jung Hwan Yum, Eric S. Larsen, Seung Min Lee
Publikováno v:
Semiconductor Science and Technology. 34:115021
Autor:
Seung Min Lee, Yoonseo Jang, Jung Hwan Yum, Eric S Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W Bielawski, Jungwoo Oh
Publikováno v:
Semiconductor Science & Technology; Nov2019, Vol. 34 Issue 11, p1-1, 1p